Method of manufacturing organic light emitting display apparatus

Abstract

An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer.

1 .- 24 . (canceled) 
     
     
         25 . A method of manufacturing an organic light-emitting display apparatus, the method comprising:
 a first mask process of forming an active layer of a TFT and a high-refractive index layer on a substrate;   forming a DBR layer covering the active layer and the high-refractive index layer;   a second mask process of forming a gate electrode of the TFT and a first electrode unit for forming a pixel electrode on the DBR layer;   forming an interlayer insulation layer covering the gate electrode and the first electrode unit;   a third mask process forming contact holes in the interlayer insulation layer and the DBR layer exposing portions of the active layer and a hole exposing a part of the first electrode unit;   a fourth mask process of forming a source electrode and a drain electrode on the interlayer insulation layer that contact the active layer via the contact holes and forming the pixel electrode from the first electrode unit; and   a fifth mask process of forming a pixel definition layer exposing at least a part of the pixel electrode.   
     
     
         26 . The method of  claim 25 , wherein the first mask process includes:
 forming an amorphous silicon layer on the substrate;   forming a polysilicon layer by crystallizing the amorphous silicon layer; and   forming simultaneously the active layer and the high-refractive index layer by patterning the polysilicon layer.   
     
     
         27 . The method of  claim 26 , further comprising, before forming the amorphous silicon layer, forming an auxiliary layer on the substrate, the active layer and the high-refractive index layer being disposed on the auxiliary layer. 
     
     
         28 . The method of  claim 25 , wherein the second mask process includes:
 sequentially forming a first conductive layer and a second conductive layer on the DBR layer; and   forming the gate electrode including the first conductive layer as a lower gate electrode and the second conductive layer as an upper gate electrode, by patterning the first conductive layer and the second conductive layer.   
     
     
         29 . The method of  claim 25 , wherein the DBR layer is formed by alternately stacking a first layer and a second layer that have different refractive indices. 
     
     
         30 . The method of  claim 29 , wherein the refractive index of the first layer is smaller than the refractive index of the second layer. 
     
     
         31 . The method of  claim 29 , wherein the first layer is formed of silicon oxide and the second layer is formed of silicon nitride. 
     
     
         32 . The method of  claim 25 , wherein the high-refractive index layer has a refractive index greater than a refractive index of the DBR layer. 
     
     
         33 . The method of  claim 25 , wherein the first mask process further comprises:
 forming a lower capacitor electrode on the substrate in the same layer as the layer in which the active layer and the high-refractive index layer are formed.   
     
     
         34 . The method of  claim 33 , wherein, in the forming of the DBR layer, the DBR layer is formed on the substrate to cover the lower capacitor electrode. 
     
     
         35 . The method of  claim 28 , wherein the fourth mask process includes:
 forming a third conductive layer on the interlayer insulation layer;   forming the source electrode and the drain electrode by patterning the third conductive layer and forming the pixel electrode including the first conductive layer, by removing the second conductive layer constituting the first electrode unit.   
     
     
         36 . (canceled) 
     
     
         37 . The method of  claim 25 , wherein the fifth mask process includes:
 forming an insulation layer on an entire surface of the substrate to cover the source electrode and the drain electrode; and   forming the pixel definition layer by patterning the insulation layer.   
     
     
         38 . The method of  claim 25 , further comprising, after the fifth mask process, forming an intermediate layer including an emissive layer, and an opposite electrode on an upper surface of the pixel electrode. 
     
     
         39 . The method of  claim 25 , wherein the high-refractive index layer is formed on the substrate so as to correspond to the pixel electrode. 
     
     
         40 . The method of  claim 25 , wherein the high-refractive index layer is formed to be smaller than the pixel electrode.