Light emitting device and method of manufacturing the same

Abstract

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

1 - 42 . (canceled) 
     
     
         43 . (canceled) 
     
     
         44 . A light emitting device comprising:
 a substrate;   a light emitting structure disposed on the substrate, the light emitting structure having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked;   a first terminal portion electrically connected to the first conductivity type semiconductor layer, penetrating the substrate and exposed to the outside;   a second terminal portion electrically connected to the second conductivity type semiconductor layer, penetrating the substrate and exposed to the outside; and   a lens disposed on the light emitting structure,   
       wherein:
 the lens includes a vertical portion which is substantially co-planar with the side surface of the substrate. 
 
     
     
         45 . The light emitting device of  claim 44 , wherein the lens is formed so as not to cover side surfaces of the light emitting structure. 
     
     
         46 . The light emitting device of  claim 44 , further comprising an intermediate layer disposed between the light emitting structure and the substrate. 
     
     
         47 . The light emitting device of  claim 46 , wherein the intermediate layer is a bonding layer. 
     
     
         48 . The light emitting device of  claim 47 , wherein the bonding layer is made of eutectic metal. 
     
     
         49 . The light emitting device of  claim 44 , wherein the substrate is formed of a material selected from the group consisting of AlN and un-doped silicon. 
     
     
         50 . The light emitting device of  claim 44 , further comprising a light conversion layer disposed between the lens and the light emitting structure and converting a wavelength of light emitted from the light emitting structure. 
     
     
         51 . The light emitting device of  claim 44 , wherein further comprising a transparent layer between the light emitting structure and the lens. 
     
     
         52 . The light emitting device of  claim 51 , wherein the transparent layer have a reflective wall structure to adjust an orientation angle of light. 
     
     
         53 . The light emitting device of  claim 44 , wherein the lens further includes a convex portion which is connected to the vertical portion.