Semiconductor device and manufacturing method thereof

Abstract

According to one embodiment, a semiconductor device includes a semiconductor substrate including semiconductor elements formed thereon, a graphene wiring structure stuck on the substrate with a connection insulating film disposed therebetween and including graphene wires, and through vias each formed through the graphene wiring structure and connection insulating film to connect part of the semiconductor elements to the graphene wires.

What is claimed is: 
     
         1 . A semiconductor device manufacturing method comprising:
 sticking a graphene layer on a first substrate including semiconductor elements formed thereon, and   forming grapheme wires by processing the graphene layer into a wiring pattern.   
     
     
         2 . The method of  claim 1 , wherein the graphene layer is formed on a second substrate. 
     
     
         3 . The method of  claim 2 , wherein the second substrate is removed before the graphene layer is stuck on the first substrate. 
     
     
         4 . The method of  claim 1 , wherein the sticking of the graphene layer comprises sticking the graphene layer on the first substrate with a connection insulating film disposed therebetween. 
     
     
         5 . The method of  claim 4 , further comprising, after the forming of the graphene wires:
 forming an interlayer insulating film to cover the graphene wires;   forming contact holes through the interlayer insulating film, the graphene wires, and the connection insulating film to connect part of the semiconductor elements to the graphene wires; and   filling a conductive material in the contact holes.   
     
     
         6 . The method of  claim 1 , wherein the first substrate has the semiconductor elements formed at temperatures of not higher than 400° C. 
     
     
         7 . The method of  claim 6 , wherein the graphene layer is grown at temperatures of not lower than 450° C. by use of a CVD method. 
     
     
         8 . The method of  claim 2 , wherein the graphene layer is deposited on a catalyst layer formed of one of Co and Ni metals and used for growing graphene at temperatures of not lower than 600° C. to form the second substrate. 
     
     
         9 . The method of  claim 8 , wherein the catalyst layer is added with a refractory metal. 
     
     
         10 . A semiconductor device manufacturing method comprising:
 sticking a graphene layer on a portion of a first substrate including semiconductor elements formed thereon, and   forming graphene wires by processing the graphene layer into a wiring pattern.   
     
     
         11 . The method of  claim 10 , wherein the graphene layer is formed on a portion of a second substrate. 
     
     
         12 . The method of  claim 11 , wherein the second substrate is removed before the graphene layer is stuck on the first substrate. 
     
     
         13 . The method of  claim 10 , wherein the sticking of the graphene layer comprises sticking the graphene layer on the first substrate with a connection insulating film disposed therebetween. 
     
     
         14 . The method of  claim 13 , further comprising, after the forming of the graphene wires:
 forming an interlayer insulating film to cover the graphene wires;   forming contact holes through the interlayer insulating film, the graphene wires, and the connection insulating film to connect part of the semiconductor elements to the graphene wires; and   filling a conductive material in the contact holes.   
     
     
         15 . The method of  claim 11 , wherein the second substrate is stuck on the first substrate by use of an alignment mark formed in the first substrate. 
     
     
         16 . The method of  claim 11 , wherein the second substrate has a damascene groove in a region larger than a region in which the graphene wires are formed, and the graphene layer is formed in the groove. 
     
     
         17 . The method of  claim 10 , wherein the first substrate has the semiconductor elements formed at temperatures of not higher than 400° C. 
     
     
         18 . The method of  claim 17 , wherein the graphene layer is grown at temperatures of not lower than 450° C. by use of a CVD method. 
     
     
         19 . The method of  claim 11 , wherein the graphene layer is deposited on a catalyst layer formed of one of Co and Ni metals and used for growing graphene at temperatures of not lower than 600° C. to form the second substrate. 
     
     
         20 . The method of  claim 19 , wherein the catalyst layer is added with a refractory metal.