US2015056799A1PendingUtilityA1

Integrated circuit including wire structure and related method

Assignee: IBMPriority: May 29, 2012Filed: Oct 21, 2014Published: Feb 26, 2015
Est. expiryMay 29, 2032(~5.8 yrs left)· nominal 20-yr term from priority
H10W 74/129H10W 72/9415H10W 72/01953H10W 72/01935H10W 72/983H10W 72/952H10W 72/59H10W 74/147H10W 20/497H10W 20/425H10W 20/063H10W 20/057H10W 20/49H10W 20/48H10W 20/033H10W 20/42H01L 21/76879H01L 2924/01029H01L 24/03H01L 21/76843H01L 2224/04042H01L 2224/03831H01L 2224/03462
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Claims

Abstract

An integrated circuit (IC), design structure, and a method of making the same. In one embodiment, the IC includes: a substrate; a dielectric layer disposed on the substrate; a set of wire components disposed on the dielectric layer, the set of wire components including a first wire component disposed proximate a second wire component; a bond pad disposed on the first wire component, the bond pad including an exposed portion; a passivation layer disposed on the dielectric layer about a portion of the bond pad and the set of wire components, the passivation layer defining a wire structure via connected to the second wire component; and a wire structure disposed on the passivation layer proximate the bond pad and connected to the second wire component through the wire structure via.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method, comprising:
 forming a dielectric layer on a substrate;   forming a metal layer on the dielectric layer;   forming a set of wire components from the metal layer, the set of wire components including a first wire component proximate a second wire component;   depositing a bond pad on the first wire component;   forming a passivation layer on the dielectric layer and about portions of the set of wire components, the passivation layer including a wire component via connected to the second wire component; and   forming a wire structure above the second wire component and physically isolated from the bond pad.   
     
     
         2 . The method of  claim 1 , wherein the forming the wire structure includes patterned plating of copper on at least one of the dielectric layer and the set of wire components. 
     
     
         3 . The method of  claim 1 , further comprising forming a diffusion barrier on at least one of the set of wire components following the forming of the passivation layer. 
     
     
         4 . The method of  claim 3 , wherein the diffusion barrier is self-aligning. 
     
     
         5 . The method of  claim 1 , further comprising:
 depositing a pattern resist on the bond pad following the depositing of the bond pad, the pattern resist configured to prevent formation of the wire structure above the first wire component.   
     
     
         6 . The method of  claim 1 , wherein the forming the wire structure includes electroplating.

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