Display device, driving method of display device, and electronic appliance

Abstract

A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a substrate;   a gate electrode over the substrate;   a semiconductor layer over the gate electrode;   a gate insulating film between the gate electrode and the semiconductor layer;   an interlayer insulating film over the semiconductor layer;   a wiring over the interlayer insulating film and electrically connected to the semiconductor layer;   a pixel electrode over and electrically connected to the wiring; and   a display medium over the substrate, the display medium comprising microelectro mechanical device,   wherein the semiconductor layer comprises an oxide semiconductor comprising indium.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the microelectro mechanical device is a digital micromirror device. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the interlayer insulating film is in contact with a top surface of the semiconductor layer. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the oxide semiconductor is InGaZnO. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein the display medium is a display medium of which contrast is changed by electromagnetic action. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein the pixel electrode overlaps with an opening portion of the interlayer insulating film. 
     
     
         8 . The semiconductor device according to  claim 2 , wherein an image of the semiconductor device is displayed by a time gray scale method. 
     
     
         9 . The semiconductor device according to  claim 2 , further comprising at least one of a power supply circuit, a flexible printed circuit, a printed wiring board, and a circuit board. 
     
     
         10 . The semiconductor device according to  claim 2 , further comprising:
 a common electrode over the pixel electrode,   a first terminal on the substrate, the first terminal being electrically connected to the common electrode,   a second terminal on the substrate, the second terminal being electrically connected to the common electrode,   wherein an entirety of the first terminal overlaps with the substrate, and an entirety of the second terminal overlaps with the substrate.   
     
     
         11 . The semiconductor device according to  claim 2 , comprising:
 a first pixel capable of displaying red color;   a second pixel capable of displaying green color; and   a third pixel capable of displaying blue color,   wherein each of the first pixel, the second pixel and the third pixel comprises a first subpixel and a second subpixel,   wherein an area of the first subpixel is smaller than an area of the second subpixel,   wherein an area of the first pixel, an area of the second pixel and an area of the third pixel are different from one another,   wherein an area of the first subpixel of the first pixel, an area of the first subpixel of the second pixel, and an area of the first subpixel of the third pixel are different from one another, and   wherein an area of the second subpixel of the first pixel, an area of the second subpixel of the second pixel, and an area of the second subpixel of the third pixel are different from one another.   
     
     
         12 . A semiconductor device comprising:
 a substrate;   a gate electrode over the substrate;   a semiconductor layer over the gate electrode;   a gate insulating film between the gate electrode and the semiconductor layer;   an interlayer insulating film over the semiconductor layer;   a wiring over the interlayer insulating film and electrically connected to the semiconductor layer;   a pixel electrode over and electrically connected to the wiring; and   a display medium over the substrate, the display medium comprising microelectro mechanical device,   wherein the semiconductor layer comprises an oxide semiconductor comprising indium, and   wherein the gate electrode has a taper shape.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the microelectro mechanical device is a digital micromirror device. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein the interlayer insulating film is in contact with a top surface of the semiconductor layer. 
     
     
         15 . The semiconductor device according to  claim 12 , wherein the oxide semiconductor is InGaZnO. 
     
     
         16 . The semiconductor device according to  claim 12 , wherein the display medium is a display medium of which contrast is changed by electromagnetic action. 
     
     
         17 . The semiconductor device according to  claim 12 , wherein the pixel electrode overlaps with an opening portion of the interlayer insulating film. 
     
     
         18 . The semiconductor device according to  claim 12 , wherein an image of the semiconductor device is displayed by a time gray scale method. 
     
     
         19 . The semiconductor device according to  claim 12 , further comprising at least one of a power supply circuit, a flexible printed circuit, a printed wiring board, and a circuit board. 
     
     
         20 . The semiconductor device according to  claim 12 , further comprising:
 a common electrode over the pixel electrode,   a first terminal on the substrate, the first terminal being electrically connected to the common electrode,   a second terminal on the substrate, the second terminal being electrically connected to the common electrode,   wherein an entirety of the first terminal overlaps with the substrate, and an entirety of the second terminal overlaps with the substrate.   
     
     
         21 . The semiconductor device according to  claim 12 , comprising:
 a first pixel capable of displaying red color;   a second pixel capable of displaying green color; and   a third pixel capable of displaying blue color,   wherein each of the first pixel, the second pixel and the third pixel comprises a first subpixel and a second subpixel,   wherein an area of the first subpixel is smaller than an area of the second subpixel,   wherein an area of the first pixel, an area of the second pixel and an area of the third pixel are different from one another,   wherein an area of the first subpixel of the first pixel, an area of the first subpixel of the second pixel, and an area of the first subpixel of the third pixel are different from one another, and   wherein an area of the second subpixel of the first pixel, an area of the second subpixel of the second pixel, and an area of the second subpixel of the third pixel are different from one another.