Substrate processing apparatus and semiconductor device producing method

Abstract

Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.

1 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate; and   processing the substrate with the substrate being rotated and processing gas being periodically supplied to the substrate,   wherein a supply cycle of the processing gas and a rotation period of the substrate do not come into synchronization with each other at least during a predetermined period in the processing of the substrate.   
     
     
         2 . The method according to  claim 1 , wherein the processing gas includes at least two types of gases. 
     
     
         3 . The method according to  claim 1 , wherein the processing gas includes first processing gas and second processing gas. 
     
     
         4 . The method according to  claim 3 , wherein the processing of the substrate includes alternately supplying the first processing gas and the second processing gas to the substrate. 
     
     
         5 . The method according to  claim 3 , wherein the processing of the substrate includes performing a cycle a predetermined number of times, the cycle including:
 supplying the first processing gas to the substrate; and   supplying the second processing gas to the substrate.   
     
     
         6 . The method according to  claim 3 , wherein the processing of the substrate includes performing a cycle a predetermined number of times, the cycle including:
 supplying the first processing gas to the substrate;   removing the first processing gas from a space in which the substrate exists;   supplying the second processing gas to the substrate; and   removing the second processing gas from the space in which the substrate exists.   
     
     
         7 . The method according to  claim 1 , wherein the processing gas is supplied to the substrate from a side of the substrate. 
     
     
         8 . The method according to  claim 1 , wherein the processing gas is supplied to a center side of the substrate from a peripheral side of the substrate. 
     
     
         9 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate; and   processing the substrate by performing a cycle a predetermined number of times with the substrate being rotated, the cycle including:   supplying first processing gas to the substrate; and   supplying second processing gas to the substrate, wherein a supply cycle of at least one of the first processing gas or the second processing gas and a rotation period of the substrate do not come into synchronization with each other at least during a predetermined period in the processing of the substrate   
     
     
         10 . A substrate processing apparatus, comprising:
 a processing chamber configured to accommodate a substrate;   a rotating mechanism configured to hold and rotate the substrate in the processing chamber;   a gas supply unit configured to supply processing gas to the substrate in the processing chamber; and   a controller configured to control the rotating mechanism and the gas supply unit such that the substrate is processed with the substrate being rotated and processing gas being periodically supplied to the substrate, and a supply cycle of the processing gas and a rotation period of the substrate do not come into synchronization with each other at least during a predetermined period in the processing of the substrate.