Nonvolatile semiconductor memory device

Abstract

A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

What is claimed is: 
     
         1 - 20 . (canceled) 
     
     
         21 . A memory device comprising:
 a semiconductor layer;   a molecular layer comprising a first portion provided above the semiconductor layer and a second portion provided on the first portion, the first portion comprising alkyl chains, and the second portion comprising charge storage portions spaced apart from each other compared to the alkyl chains;   a first insulating film provided above the molecular layer; and   a control gate electrode formed above the first insulating film.   
     
     
         22 . The device according to  claim 21 , wherein the first portion further comprises alkyl halide chains. 
     
     
         23 . The device according to  claim 21 , wherein the first portion is filled with the alkyl chains. 
     
     
         24 . The device according to  claim 22 , wherein the first portion is filled with the alkyl chains and the alkyl halide chains. 
     
     
         25 . The device according to  claim 21 , further comprising a second insulating film provided between the semiconductor layer and the molecular layer. 
     
     
         26 . The device according to  claim 21 , further comprising a silicon oxide film provided between the semiconductor layer and the molecular layer. 
     
     
         27 . The device according to  claim 21 , wherein one of the charge storage portions comprises a metal element. 
     
     
         28 . The device according to  claim 21 , wherein one of the charge storage portions comprises a metal element selected from the group consisting of Zn, Ti, Cu, Ir, Ru, Ni, Co, Li, Mn and Mg. 
     
     
         29 . The device according to  claim 21 , wherein one of the charge storage portions comprises a π-conjugated system. 
     
     
         30 . The device according to  claim 21 , wherein one of the charge storage portions comprises nitrogen. 
     
     
         31 . The device according to  claim 21 , wherein one of the charge storage portions comprises a metal element and nitrogen. 
     
     
         32 . A memory device comprising:
 a semiconductor layer;   a molecular layer comprising a first portion provided above the semiconductor layer and a second portion provided on the first portion, the first portion comprising alkyl halide chains, and the second portion comprising charge storage portions spaced apart from each other compared to the alkyl halide chains;   a first insulating film provided above the molecular layer; and   a control gate electrode formed above the first insulating film.   
     
     
         33 . The device according to  claim 32 , further comprising a second insulating film provided between the semiconductor layer and the molecular layer. 
     
     
         34 . The device according to  claim 32 , further comprising a silicon oxide film provided between the semiconductor layer and the molecular layer. 
     
     
         35 . The device according to  claim 32 , wherein one of the charge storage portions comprises a metal element. 
     
     
         36 . The device according to  claim 32 , wherein one of the charge storage portions comprises a metal element selected from the group consisting of Zn, Ti, Cu, Ir, Ru, Ni, Co, Li, Mn and Mg. 
     
     
         37 . The device according to  claim 32 , wherein one of the charge storage portions comprises a π-conjugated system. 
     
     
         38 . The device according to  claim 32 , wherein one of the charge storage portions comprises nitrogen. 
     
     
         39 . The device according to  claim 32 , wherein one of the charge storage portions comprises a metal element and nitrogen.