Semiconductor light emitting device

Abstract

According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

What is claimed is: 
     
         1 . A semiconductor light emitting device, comprising:
 a semiconductor layer including a light emitting layer;   a first electrode provided on a first side of the semiconductor layer;   a first layer provided on a second side of the semiconductor layer and including a first metal, the second side being opposed to the first side;   a second layer provided on the second side of the semiconductor layer and protruding from the semiconductor layer to cover the first layer;   a substrate provided with a second electrode and connected to the second layer; and   an insulating film provided on the first side of the semiconductor layer, wherein the second layer includes a third layer including a second metal and a fourth layer including a third metal, the third layer is provided closer to the substrate than the fourth layer, a silicon nitride is included in an area which is a surface of the second layer at the side of the semiconductor layer and protrudes from an edge of the semiconductor layer.   
     
     
         2 . The semiconductor light emitting device according to  claim 1 , wherein
 a width of the semiconductor layer becomes wider toward the second layer from the first electrode.   
     
     
         3 . The semiconductor light emitting device according to  claim 1 , wherein
 the second layer serves as a stopper when etching the semiconductor layer by etching technique.   
     
     
         4 . The semiconductor light emitting device according to  claim 1 , wherein
 an area of the first layer is smaller than that of the second surface of the semiconductor layer.   
     
     
         5 . The semiconductor light emitting device according to  claim 1 , wherein
 the second layer covers a sidewall of the first layer and a first surface of the first layer at the side opposite to the semiconductor layer.   
     
     
         6 . The semiconductor light emitting device according to  claim 1 , wherein
 the insulating film extends a sidewall of the semiconductor layer and a portion of the second layer protruding from the second layer.   
     
     
         7 . The semiconductor light emitting device according to  claim 1 , wherein
 the substrate is bonded to the second layer.   
     
     
         8 . The semiconductor light emitting device according to  claim 7 , wherein
 the second layer includes a fifth layer including gold between the third layer and the substrate.   
     
     
         9 . The semiconductor light emitting device according to  claim 7 , wherein
 the second layer includes a layer including nickel between the first layer and the fourth layer.   
     
     
         10 . The semiconductor light emitting device according to  claim 1 , wherein
 the first layer is buried into the semiconductor layer so that a surface which is in contact with the second layer is flush with the second surface of the semiconductor layer.   
     
     
         11 . The semiconductor light emitting device according to  claim 1 , wherein
 the first surface of the semiconductor layer is formed concavo-convex.