Controlling the melt front of thin film applications

Abstract

Systems and methods for bonding include selectively heating an initial location of a sample to melt a bonding layer at an interface between a first layer and a second layer of the sample. The heating is propagated in a direction away from the initial location such that a melt front of the bonding layer is translated across the interface to provide a void free bond between the first layer and the second layer.

What is claimed is: 
     
         1 . A system for bonding, comprising:
 a controller configured to control a plurality of heating elements to selectively heat an initial location of a sample to melt a bonding layer at an interface between a first layer and a second layer of the sample, and propagate the heating in a direction away from the initial location such that a melt front of the bonding layer is translated across the interface to provide a void free bond between the first layer and the second layer.   
     
     
         2 . The system as recited in  claim 1 , wherein the first layer includes a thin film and the second layer includes a substrate. 
     
     
         3 . The system as recited in  claim 1 , wherein the bonding layer includes a bonding metallization layer. 
     
     
         4 . A system for bonding, comprising:
 a plurality of heating elements; and   a controller configured to control the plurality of heating elements to selectively heat an initial location of a sample to melt a bonding layer at an interface between a first layer and a second layer of the sample, and propagate the heating in a direction away from the initial location such that a melt front of the bonding layer is translated across the interface to provide a void free bond between the first layer and the second layer.   
     
     
         5 . The system as recited in  claim 4 , further comprising a vacuum configured to control an environment of the sample. 
     
     
         6 . The system as recited in  claim 5 , further comprising a gas introduced in the vacuum to alter the surface of the bonding layers. 
     
     
         7 . The system as recited in  claim 4 , further comprising a membrane configured to conform over a surface of the sample for improved thermal contact. 
     
     
         8 . The system as recited in  claim 4 , wherein the direction is selected based on at least one of a shape and size of the sample. 
     
     
         9 . The system as recited in  claim 4 , wherein the direction includes at least one of side to side and center to edge. 
     
     
         10 . The system as recited in  claim 4 , wherein the first layer includes a thin film and the second layer includes a substrate. 
     
     
         11 . The system as recited in  claim 4 , wherein the bonding layer includes a bonding metallization layer.