US2015041831A1PendingUtilityA1

PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC

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Assignee: INFINEON TECHNOLOGIES AUSTRIAPriority: Oct 25, 2006Filed: Oct 28, 2014Published: Feb 12, 2015
Est. expiryOct 25, 2026(~0.2 yrs left)· nominal 20-yr term from priority
Inventors:Roland RuppThomas GuttMichael Treu
H10P 34/42H10P 14/3456H10P 14/3454H10P 14/3411H10D 64/0115H10D 64/0123H10D 64/64H10D 64/62H10D 64/23H10D 62/8325H10D 12/031H10D 8/60H10D 8/051H01L 29/45H01L 29/417H01L 29/1608
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Claims

Abstract

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An integrated circuit comprising:
 an SiC substrate;   a layer containing silicon formed on a surface of the SiC substrate; and   an electrical contact comprising a metal silicide, located on a boundary surface to the SiC substrate.   
     
     
         2 . The integrated circuit of  claim 1 , comprising:
 wherein the metal silicide is formed by thermal action via irradiating a metal layer.   
     
     
         3 . The integrated circuit of  claim 1 , further comprising:
 a component structure.

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