Crack Sensors for Semiconductor Devices

Abstract

Crack sensors for semiconductor devices, semiconductor devices, methods of manufacturing semiconductor devices, and methods of testing semiconductor devices are disclosed. In one embodiment, a crack sensor includes a conductive structure disposed proximate a perimeter of an integrated circuit. The conductive structure is formed in at least one conductive material layer of the integrated circuit. The conductive structure includes a first end and a second end. A first terminal is coupled to the first end of the conductive structure, and a second terminal is coupled to the second end of the conductive structure.

What is claimed is: 
     
         1 . A method of testing a semiconductor device, the method comprising:
 providing the semiconductor device, the semiconductor device comprising at least one integrated circuit including a crack sensor disposed proximate a perimeter of the at least one integrated circuit, the crack sensor comprising a conductive structure disposed in at least one conductive material layer of the integrated circuit, the conductive structure comprising a first end and a second end, the crack sensor including a first terminal coupled to the first end of the conductive structure and a second terminal coupled to the second end of the conductive structure; and   testing for a presence of a crack in the at least one integrated circuit by making electrical contact to a portion of the crack sensor.   
     
     
         2 . The method according to  claim 1 , wherein the testing for the presence of the crack comprises applying a voltage across the first terminal and the second terminal of the crack sensor, and determining if a current passes through the crack sensor. 
     
     
         3 . The method according to  claim 2 , wherein a crack is detected in the at least one integrated circuit if the current does not pass through the crack sensor when the voltage is applied across the first terminal and the second terminal of the crack sensor. 
     
     
         4 . The method according to  claim 1 , wherein providing the semiconductor device comprises providing a semiconductor device wherein the at least one integrated circuit comprises a crack sensor including at least one third terminal coupled to or disposed on or over portions of the crack sensor, wherein the method includes testing regions of the crack sensor for the presence of cracks between the first terminal and the second terminal, between the first terminal and the at least one third terminal, between the second terminal at the at least one third terminal, or between two of the at least one third terminals. 
     
     
         5 . The method according to  claim 1 , wherein the first terminal and the second terminal of the crack sensor comprise contacts or bond pads, and wherein testing for the presence of the crack in the at least one integrated circuit comprises probing the contacts or bond pads. 
     
     
         6 . The method according to  claim 1 , wherein the at least one integrated circuit comprises an on-chip test circuit coupled to the first terminal and the second terminal of the crack sensor, and wherein testing for the presence of the crack in the at least one integrated circuit comprises testing for the presence of the crack using the on-chip test circuit. 
     
     
         7 . A method of testing a semiconductor device, the method comprising:
 providing the semiconductor device, the semiconductor device comprising at least one integrated circuit including a crack sensor disposed proximate a perimeter of the at least one integrated circuit, the crack sensor comprising
 a conductive structure disposed in at least one conductive material layer of the integrated circuit, the conductive structure beginning at a first end and ending at a second end, the conductive structure completely encircling the integrated circuit between the first end and the second end, wherein the first end is electrically coupled to the second end only through the encircling; 
 a first terminal coupled to the first end of the conductive structure; 
 a second terminal coupled to the second end of the conductive structure, the conductive structure, the first and the second terminals forming a crack sensor; and 
   testing for a presence of a crack in the at least one integrated circuit by making electrical contact to a portion of the crack sensor.   
     
     
         8 . The method according to  claim 7 , wherein the semiconductor device further comprises a crack stop layer disposed adjacent the conductive structure, wherein the conductive structure is disposed between the crack stop layer and an interior region of the integrated circuit. 
     
     
         9 . The method according to  claim 7 , wherein the conductive structure comprises a plurality of first portions disposed in a first conductive material layer and a plurality of second portions disposed in a second conductive material layer, wherein the plurality of first portions is coupled to at least one of the plurality of second portions. 
     
     
         10 . The method according to  claim 9 , wherein the conductive structure comprises a serpentine chain of the plurality of first portions and the plurality of second portions. 
     
     
         11 . The method according to  claim 9 , wherein the plurality of first portions are substantially the same size as the plurality of second portions. 
     
     
         12 . The method according to  claim 9 , wherein the conductive structure further comprises a plurality of third portions disposed in a third conductive material layer, the plurality of third portions being disposed between the plurality of first portions and the plurality of second portions. 
     
     
         13 . The method according to  claim 12 , wherein the conductive structure comprises a serpentine chain of the plurality of first portions, the plurality of second portions, and the plurality of third portions, wherein each of the plurality of third portions is coupled between one of the plurality of first portions and one of the plurality of second portions. 
     
     
         14 . The method according to  claim 7 , wherein the conductive structure comprises a conductive line in at least one conductive material layer of the integrated circuit. 
     
     
         15 . The method according to  claim 7 , wherein the testing for the presence of the crack comprises applying a voltage across the first terminal and the second terminal of the crack sensor, and determining if a current passes through the crack sensor. 
     
     
         16 . The method according to  claim 15 , wherein a crack is detected in the at least one integrated circuit if the current does not pass through the crack sensor when the voltage is applied across the first terminal and the second terminal of the crack sensor. 
     
     
         17 . A method of testing a semiconductor device, the method comprising:
 providing the semiconductor device, the semiconductor device comprising:
 an integrated circuit, the integrated circuit having a perimeter; and 
 a crack sensor disposed around and on the integrated circuit proximate the perimeter of the integrated circuit, the crack sensor comprising a conductive structure, the conductive structure beginning at a first end and ending at a second end, wherein the conductive structure between the first end and the second end completely encircles the integrated circuit, wherein the conductive structure comprises a plurality of discontinuous line segments in a first metal level of the integrated circuit, a plurality of discontinuous line segments in a second metal level of the integrated circuit, and a plurality of vias connecting the plurality of discontinuous line segments in the first metal level to the plurality of discontinuous line segments in the second metal level thereby forming a continuous conductor between the first and the second ends, wherein the crack sensor includes a first terminal coupled to the first end of the conductive structure and a second terminal coupled to the second end of the conductive structure, and wherein the first end is electrically coupled to the second end only through the encircling conductive structure between the first and the second ends; and 
   testing for a presence of a crack in the at least one integrated circuit by making electrical contact to a portion of the crack sensor.   
     
     
         18 . The method according to  claim 17 , wherein the testing for the presence of the crack comprises applying a voltage across the first terminal and the second terminal of the crack sensor, and determining if a current passes through the crack sensor. 
     
     
         19 . The method according to  claim 18 , wherein a crack is detected in the at least one integrated circuit if the current does not pass through the crack sensor when the voltage is applied across the first terminal and the second terminal of the crack sensor. 
     
     
         20 . The method according to  claim 17 , wherein the second end of the conductive structure is closer to a side of the integrated circuit than the first end of the conductive structure.