US2015034483A1PendingUtilityA1

Fe-Co-BASED ALLOY SPUTTERING TARGET MATERIAL, AND METHOD OF PRODUCING SAME

Assignee: HITACHI METALS LTDPriority: Jun 6, 2012Filed: May 30, 2013Published: Feb 5, 2015
Est. expiryJun 6, 2032(~5.9 yrs left)· nominal 20-yr term from priority
B22F 3/14H01J 2237/02C23C 14/3414H01J 37/3429C22C 38/12G11B 5/851C22C 2202/02C22C 30/00C23C 14/14C22C 38/26C22C 38/10C23C 14/20B22F 9/082C22C 19/07H01F 41/183C22C 33/0285C22C 38/30C22C 38/00
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Claims

Abstract

Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fe a —Co 100-a ) 100-b-c-d —Ta b —Nb c -M d , wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ε fB at 300° C. of 0.4% or more.

Claims

exact text as granted — not AI-modified
1 . A Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fe a —Co 100-a ) 100-b-c-d —Ta b —Nb c -M d , wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ε fB  at 300° C. of 0.4% or more. 
     
     
         2 . The Fe—Co-based alloy sputtering target material according to  claim 1 , wherein b in the compositional formula satisfies the relationship: b=0. 
     
     
         3 . The Fe—Co-based alloy sputtering target material according to  claim 1 , wherein an area ratio, in a field of vision of from 0.01 mm 2  to 0.10 mm 2 , of an intermetallic compound phase containing one or more selected from Ta or Nb is 30 area % or less. 
     
     
         4 . The Fe—Co-based alloy sputtering target material according to  claim 1 , wherein when an inscribed circle is drawn in a region of an intermetallic compound phase containing one or more selected from Ta or Nb, the maximum diameter of the inscribed circle is 30 μm or less. 
     
     
         5 . A method of producing a Fe—Co-based alloy sputtering target material, the method comprising pressurized sintering, a powdered composition having a composition represented as an atomic ratio by the compositional formula: (Fe a —Co 100-a ) 100-b-c-d —Ta b —Nb c -M d , wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, under conditions of a sintering temperature of from 800° C. to 1400° C., a pressurizing pressure of from 100 MPa to 200 MPa, and a sintering time of from 1 hour to 10 hours. 
     
     
         6 . The method of producing a Fe—Co-based alloy sputtering target material according to  claim 5 , wherein b in the compositional formula satisfies the relationship: b=0. 
     
     
         7 . The Fe—Co-based alloy sputtering target material according to  claim 2 , wherein an area ratio, in a field of vision of from 0.01 mm 2  to 0.10 mm 2 , of an intermetallic compound phase containing one or more selected from Ta or Nb is 30 area % or less. 
     
     
         8 . The Fe—Co-based alloy sputtering target material according to  claim 2 , wherein when an inscribed circle is drawn in a region of an intermetallic compound phase containing one or more selected from Ta or Nb, the maximum diameter of the inscribed circle is 30 μm or less. 
     
     
         9 . The Fe—Co-based alloy sputtering target material according to  claim 3 , wherein when an inscribed circle is drawn in a region of an intermetallic compound phase containing one or more selected from Ta or Nb, the maximum diameter of the inscribed circle is 30 μm or less. 
     
     
         10 . The Fe—Co-based alloy sputtering target material according to  claim 7 , wherein when an inscribed circle is drawn in a region of an intermetallic compound phase containing one or more selected from Ta or Nb, the maximum diameter of the inscribed circle is 30 μm or less.

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