Photosensitive polysiloxane composition and uses thereof

Abstract

The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D).

What is claimed is: 
     
         1 . A photosensitive polysiloxane composition comprising:
 a polysiloxane (A);   an o-naphthoquinone diazide sulfonic acid ester (B);   an alkali-soluble resin containing a silyl group (C); and   a solvent (D).   
     
     
         2 . The photosensitive polysiloxane composition according to  claim 1 , wherein the alkali-soluble resin containing the silyl group (C) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride (c-1), an unsaturated compound containing a silyl group (c-2) represented by Formula (1) and/or an other unsaturated compounds (c-3), 
       
         
           
           
               
               
           
         
         wherein: 
         R 1  represents a hydrogen atom or a methyl group; 
         a represents an integer selected from 1 to 6; 
         R 2  and R 3  independently represent an alkyl group containing 1 to 12 carbon atoms, a phenyl group, an alkoxy group containing 1 to 6 carbon atoms, or a group represented by Formula (2); 
         b represents an integer selected from 1 to 150; when R 2  and R 3  are plural, each R 2  and R 3  are the same or different; 
         R 4  represents an alkyl group containing 1 to 6 carbon atoms or a group represented by Formula (3); 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 5 , R 6  and R 7  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group; 
         c represents an integer selected from 2 to 13; when R 6  and R 7  are plural, each R 6  and R 7  are the same or different; and 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 8 , R 9  and R 10  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group to. 
       
     
     
         3 . The photosensitive polysiloxane composition according to  claim 1 , wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),
   Si(R a ) W (OR b ) 4-W   Formula (4),
   wherein:   R a  represents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when R a  is plural, each R a  is the same or different;   R b  represents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when R b  is plural, each R b  is the same or different; and   w represents an integer from 0 to 3.   
     
     
         4 . The photosensitive polysiloxane composition according to  claim 3 , wherein at least one of R a  represents the alkyl group containing the acid anhydride group, the alkyl group containing the epoxy group, or the alkoxy group containing the epoxy group. 
     
     
         5 . The photosensitive polysiloxane composition according to  claim 1 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A), the used amount of the o-naphthoquinone diazide sulfonic acid ester (B) is from 2 parts by weight to 30 parts by weight; the used amount of the alkali-soluble resin containing the silyl group (C) is from 0.5 part by weight to 20 parts by weight; and the used amount of the solvent (D) is from 100 parts by weight to 1200 parts by weight. 
     
     
         6 . A method for forming a thin film on a substrate comprising applying the photosensitive polysiloxane composition according to  claim 1  on the substrate. 
     
     
         7 . The method according to  claim 6 , wherein the alkali-soluble resin containing the silyl group (C) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride (c-1), an unsaturated compound containing a silyl group (c-2) represented by Formula (1) and/or an other unsaturated compounds (c-3), 
       
         
           
           
               
               
           
         
         wherein: 
         R 1  represents a hydrogen atom or a methyl group; 
         a represents an integer selected from 1 to 6; 
         R 2  and R 3  independently represent an alkyl group containing 1 to 12 carbon atoms, a phenyl group, an alkoxy group containing 1 to 6 carbon atoms, or a group represented by Formula (2); 
         b represents an integer selected from 1 to 150; when R 2  and R 3  are plural, each R 2  and R 3  are the same or different; 
         R 4  represents an alkyl group containing 1 to 6 carbon atoms or a group represented by Formula (3); 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 5 , R 6  and R 7  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group; 
         c represents an integer selected from 2 to 13; when R 6  and R 7  are plural, each R 6  and R 7  are the same or different; and 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 8 , R 9  and R 10  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group. 
       
     
     
         8 . The method according to  claim 6 , wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),
   Si(R a ) W (OR b ) 4-W   Formula (4),
   wherein:   R a  represents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when R a  is plural, each R a  is the same or different;   R b  represents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when R b  is plural, each R b  is the same or different; and   w represents an integer from 0 to 3.   
     
     
         9 . The method according to  claim 8 , wherein at least one of R a  represents the alkyl group containing the acid anhydride group, the alkyl group containing the epoxy group, or the alkoxy group containing the epoxy group. 
     
     
         10 . The method according to  claim 6 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A), the used amount of the o-naphthoquinone diazide sulfonic acid ester (B) is from 2 parts by weight to 30 parts by weight; the used amount of the alkali-soluble resin containing the silyl group (C) is from 0.5 part by weight to 20 parts by weight; and the used amount of the solvent (D) is from 100 parts by weight to 1200 parts by weight. 
     
     
         11 . A thin film on a substrate, which is manufactured by the method according to  claim 6 . 
     
     
         12 . The thin film according to  claim 11 , wherein the alkali-soluble resin containing the silyl group (C) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride (c-1), an unsaturated compound containing a silyl group (c-2) represented by Formula (1) and/or an other unsaturated compounds (c-3), 
       
         
           
           
               
               
           
         
         wherein: 
         R 1  represents a hydrogen atom or a methyl group; 
         a represents an integer selected from 1 to 6; 
         R 2  and R 3  independently represent an alkyl group containing 1 to 12 carbon atoms, a phenyl group, an alkoxy group containing 1 to 6 carbon atoms, or a group represented by Formula (2); 
         b represents an integer selected from 1 to 150; when R 2  and R 3  are plural, each R 2  and R 3  are the same or different; 
         R 4  represents an alkyl group containing 1 to 6 carbon atoms or a group represented by Formula (3); 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 5 , R 6  and R 7  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group; 
         c represents an integer selected from 2 to 13; when R 6  and R 7  are plural, each R 6  and R 7  are the same or different; and 
       
       
         
           
           
               
               
           
         
         wherein: 
         R 8 , R 9  and R 10  independently represent an alkyl group containing 1 to 12 carbon atoms or a phenyl group. 
       
     
     
         13 . The thin film according to  claim 11 , wherein the polysiloxane (A) is copolymerized by a compound represented by Formula (4),
   Si(R a ) W (OR b ) 4-W   Formula (4),
   wherein:   R a  represents hydrogen, an alkyl group containing 1 to 10 carbon atoms, an alkenyl group containing 2 to 10 carbon atoms, an aryl group containing 6 to 15 carbon atoms, an alkyl group containing an acid anhydride group, an alkyl group containing an epoxy group, or an alkoxy group containing an epoxy group; when R a  is plural, each R a  is the same or different;   R b  represents hydrogen, an alkyl group containing 1 to 6 carbon atoms, an acyl group containing 1 to 6 carbon atoms, an aryl group containing 6 to 15 carbon atoms; when R b  is plural, each R b  is the same or different; and   w represents an integer from 0 to 3.   
     
     
         14 . The thin film according to  claim 13 , wherein at least one of R a  represents the alkyl group containing the acid anhydride group, the alkyl group containing the epoxy group, or the alkoxy group containing the epoxy group. 
     
     
         15 . The thin film according to  claim 11 , wherein based on 100 parts by weight of the used amount of the polysiloxane (A), the used amount of the o-naphthoquinone diazide sulfonic acid ester (B) is from 2 parts by weight to 30 parts by weight; the used amount of the alkali-soluble resin containing the silyl group (C) is from 0.5 part by weight to 20 parts by weight; and the used amount of the solvent (D) is from 100 parts by weight to 1200 parts by weight. 
     
     
         16 . The thin film according to  claim 11 , wherein the thin film is a planarization film of a TFT substrate in a liquid crystal display element or organic light-emitting display device, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. 
     
     
         17 . A device comprising the thin film according to  claim 11 . 
     
     
         18 . A device comprising the thin film according to  claim 16 .