Resist material and pattern forming method using same

Abstract

In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.

1 . A resist material to be used in an imprint process, comprising:
 a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group;   a dendrimer having at least two reactive groups for photo-cationic polymerization; and   a photo-acid generator as a polymerization initiator.   
     
     
         2 . The material of  claim 1 , wherein the material comprises:
 50% or more and 90% or less by weight of the diluent monomer;   5% or more and 50% or less by weight of the dendrimer; and   0.3% or more and 10% or less by weight of the polymerization initiator.   
     
     
         3 . The material of  claim 1 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization. 
     
     
         4 . The material of  claim 1 , wherein the diluent monomer having the hydroxyl group and the vinyl ether group is represented by general formula Ia: 
       
         
           
           
               
               
           
         
         wherein R is a hydrocarbon chain. 
       
     
     
         5 . The material of  claim 1 , wherein the diluent monomer having the hydroxyl group and the epoxy group is represented by general formula Ib: 
       
         
           
           
               
               
           
         
         wherein R 1  is a hydrocarbon chain. 
       
     
     
         6 . The material of  claim 1 , wherein the diluent monomer having the hydroxyl group and the oxetanyl group is represented by general formula Ic: 
       
         
           
           
               
               
           
         
         wherein each of R 2  and R 3  is a hydrocarbon chain. 
       
     
     
         7 . A resist material to be used in an imprint process, comprising:
 a diluent monomer having a vinyl ether group and a hydroxyl group;   a dendrimer having at least two reactive groups for photo-radical polymerization; and   an acid-and-radical generator as a polymerization initiator.   
     
     
         8 . The material of  claim 7 , wherein the acid-and-radical generator is an onium salt. 
     
     
         9 . The material of  claim 7 , wherein the material comprises:
 50% or more and 90% or less by weight of the diluent monomer;   5% or more and 50% or less by weight of the dendrimer; and   0.3% or more and 10% or less by weight of the polymerization initiator.   
     
     
         10 . The material of  claim 7 , wherein the dendrimer has an acryloyl group as the reactive groups for photo-radical polymerization. 
     
     
         11 . The material of  claim 7 , wherein the diluent monomer having the vinyl ether group and the hydroxyl group is represented by general formula Ia: 
       
         
           
           
               
               
           
         
         wherein R is a hydrocarbon chain. 
       
     
     
         12 . A pattern forming method comprising:
 providing, on a substrate, a resist material which comprises a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group, a dendrimer having at least two reactive groups for photo-cationic polymerization, and a photo-acid generator as a polymerization initiator;   imprinting a template having concave-convex shape patterns against the resist material;   curing the resist material; and   releasing the template from the cured resist material.   
     
     
         13 . The method of  claim 12 , wherein the resist material comprises:
 50% or more and 90% or less by weight of the diluent monomer;   5% or more and 50% or less by weight of the dendrimer; and   0.3% or more and 10% or less by weight of the polymerization initiator.   
     
     
         14 . The method of  claim 12 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization. 
     
     
         15 . The method of  claim 12 , wherein the resist material is provided on an adhesion film on the substrate. 
     
     
         16 . The method of  claim 12 , wherein the resist material is cured by irradiating the resist material with an ultraviolet ray. 
     
     
         17 . A pattern forming method comprising:
 providing, on a substrate, a resist material which comprises a diluent monomer having a vinyl ether group and a hydroxyl group, a dendrimer having at least two reactive groups for photo-radical polymerization, and an acid-and-radical generator as a polymerization initiator;   imprinting a template having concave-convex shape patterns against the resist material;   curing the resist material; and   releasing the template from the cured resist material.   
     
     
         18 . The method of  claim 17 , wherein the acid-and-radical generator is an onium salt. 
     
     
         19 . The method of  claim 17 , wherein the material comprises:
 50% or more and 90% or less by weight of the diluent monomer;   5% or more and 50% or less by weight of the dendrimer; and   0.3 or more and 10% or less by weight of the polymerization initiator.   
     
     
         20 . The method of  claim 17 , wherein the dendrimer has an acryloyl group as the reactive groups for photo-radical polymerization.