Method for isolating flexible film from support substrate

Abstract

Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.

What is claimed is: 
     
         1 . A method for isolating a flexible film from a support substrate, comprising:
 providing a support substrate with a top surface;   subjecting the top surface of the support substrate with a surface treatment, thereby forming a top surface with detachment characteristics;   forming a flexible film on the top surface of the support substrate; and   isolating the flexible film from the support substrate,   wherein the surface treatment comprises providing a chemical agent to react with the top surface of the support substrate; and   wherein the chemical agent has the structure represented by   
       
         
           
           
               
               
           
         
       
       wherein W is C, Si, or Ge; X is S, or Se; Y is C, or S; R 1 , R 2 , and R 3  are independent and comprise H, alkenyl group, alkyl group, or —OR; R is C 1-18  alkyl group; R 4  is F, Br, I, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof; R 5  is Li; and R 6 , R 7 , and R 8  are independent and comprise F, Cl, Br, I, alkenyl group, alkyl group, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof. 
     
     
         2 . The method as claimed in  claim 1 , wherein the support substrate comprises a metallic substrate, a plastic substrate, a ceramic substrate, a glass substrate, or a silicon wafer. 
     
     
         3 . The method as claimed in  claim 1 , after subjecting the top surface of the support substrate to the surface treatment, functional groups of the treated top surface of the support substrate, which are able to form bonds with the flexible film, are consumed, covered or displaced. 
     
     
         4 . The method as claimed in  claim 3 , wherein the functional groups which are able to be bonded with the flexible film comprises hydroxyl group, carboxyl group, amino group, or ester group. 
     
     
         5 . The method as claimed in  claim 3 , wherein the bonds formed between the top surface of the support substrate and the flexible film comprises an ionic bond, a covalent bond or a hydrogen bond. 
     
     
         6 . The method as claimed in  claim 1 , wherein the chemical agent comprises chloromethyl trimethylsilane, 2-bromopropane, trimethyl fluorosilane, trimethyl bromosilane, trimethyl iodosilane, trimethylsilyl cyanide, thionyl chloride, lithium diisopropylamide, phosphorus trichloride, sulfuryl chloride, or combinations thereof. 
     
     
         7 . The method as claimed in  claim 1 , wherein the chemical agent is formed on the top surface of the support substrate by dip coating, spin coating, imprinting, scraping, or roll-coating. 
     
     
         8 . The method as claimed in  claim 1 , wherein the flexible film comprises polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polynorbornene (PNB), polyetherimide (PEI), polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). 
     
     
         9 . The method as claimed in  claim 1 , before forming the flexible film on the top surface of the support substrate, further comprising:
 forming a functional film on the support substrate, wherein the functional film comprises a stress reduction film, an anti-scratch film, an anti-reflection film, a gas barrier film or lamination thereof.   
     
     
         10 . The method as claimed in  claim 1 , wherein the flexible film is formed on the top surface of the support substrate by wet coating or evaporation. 
     
     
         11 . A method for isolating a flexible film from a support substrate, comprising:
 providing a support substrate with a top surface;   subjecting the top surface of the support substrate with a surface treatment, thereby forming a top surface with detachment characteristics;   forming a flexible film on the top surface of the support substrate; and   isolating the flexible film from the support substrate,   wherein the surface treatment comprises providing a chemical agent to react with the top surface of the support substrate, and the chemical agent has the structure represented by   
       
         
           
           
               
               
           
         
         
           wherein W is C, Si, or Ge; X is S, or Se; Y is C, or S; R 1 , R 2 , and R 3  are independent and comprise H, alkenyl group, alkyl group, or —OR; R is C 1-18  alkyl group; R 4  is F, Br, I, Cl, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof; R 5  is Li; and R 6 , R 7 , and R 8  are independent and comprise F, Cl, Br, I, alkenyl group, alkyl group, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof, and wherein the chemical agent is not trimethyl chlorosilane, or dimethyl dichlorosilane. 
         
       
     
     
         12 . A method for isolating a flexible film from a support substrate, comprising:
 providing a support substrate with a top surface;   subjecting a part of the top surface of the support substrate with a surface treatment, thereby forming a mold release region, wherein an adhesive region is the part of the top surface beyond the mold release region;   forming a flexible film on the top surface of the support substrate, wherein the flexible film covers the mold release region and the adhesive region;   forming an electronic element on the flexible film; and   isolating a flexible electronic device from the support substrate, wherein the surface treatment comprises providing a chemical agent to react with the top surface of the support substrate, and the chemical agent has the structure represented by   
       
         
           
           
               
               
           
         
         
           wherein W is C, Si, or Ge; X is S, or Se; Y is C, or S; R 1 , R 2 , and R 3  are independent and comprise H, alkenyl group, alkyl group, or —OR; R is C 1-18  alkyl group; R 4  is F, Br, I, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof; R 5  is Li; and R 6 , R 7 , and R 8  are independent and amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof. 
         
       
     
     
         13 . A method for isolating a flexible film from a support substrate, comprising:
 providing a support substrate with a top surface;   subjecting a part of the top surface of the support substrate with a surface treatment, thereby forming a mold release region, wherein an adhesive region is the part of the top surface beyond the mold release region;   forming a flexible film on the top surface of the support substrate, wherein the flexible film covers the mold release region and the adhesive region;   forming an electronic element on the flexible film; and   isolating a flexible electronic device from the support substrate,   wherein the surface treatment comprises providing a chemical agent to react with the top surface of the support substrate, and the chemical agent has the structure represented by   
       
         
           
           
               
               
           
         
         
           wherein W is C, Si, or Ge; X is S, or Se; Y is C, or S; R 1 , R 2 , and R 3  are independent and comprise H, alkenyl group, alkyl group, or —OR; 
         
         R is C 1-18  alkyl group; R 4  is F, Br, I, Cl, carboxyl group, amino group, amine group, cyano group, amide group, alkyl halide group, or combinations thereof; R 5  is Li; and R 6 , R 7 , and R 8  are independent and comprise F, Cl, Br, I, alkenyl group, alkyl group, carboxyl group, group, or combinations thereof, and wherein the chemical agent is not trimethyl chlorosilane, or dimethyl dichlorosilane.