Asymmetrical replacement metal gate field effect transistor

Abstract

An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator region disposed between the extended source region and the drain region and a gate region disposed above the extended source region and the silicon on insulator region.

1 . An asymmetrical field effect transistor (FET) device comprising:
 a semiconductor substrate;   a buried oxide layer disposed on the semiconductor substrate;   an extended source region disposed on the buried oxide layer;   a drain region disposed on the buried oxide layer;   a silicon on insulator region disposed between the extended source region and the drain region;   a gate region disposed above the extended source region and the silicon on insulator region, wherein the gate region overlaps a portion of the extended source region and wherein the drain region is not overlapped by the gate region.   
     
     
         2 . The asymmetrical FET device of  claim 1 , further comprising a high-k layer disposed above the silicon on insulator region, the extended source region and the drain region. 
     
     
         3 . The asymmetrical FET device of  claim 2 , further comprising a metal gate layer disposed between the high-k layer and a contact metal layer. 
     
     
         4 . The asymmetrical FET device of  claim 1 , wherein a width of the extended source region is greater than a width of the drain region. 
     
     
         5 . The asymmetrical FET device of  claim 1 , further comprising one or more spacers adjacent to a side portion of the gate region. 
     
     
         6 . (canceled) 
     
     
         7 . The asymmetrical FET device of  claim 1 , wherein the asymmetrical FET device is a planar FET. 
     
     
         8 .- 20 . (canceled)