Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same

Abstract

A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

1 . A chemical mechanical polishing (CMP) slurry composition for polishing a layer, the composition comprising:
 from about 0.001% to about 5% by weight of oxide-polishing particles;   from about 0.1% to about 5% by weight of an oxidant;   from 0% to about 5% by weight of a polishing regulator;   from 0% to about 3% by weight of a surfactant;   from 0% to about 3% by weight of a pH regulator; and   from about 79% to about 99.889% by weight of deionized water.   
     
     
         2 . The CMP slurry composition of  claim 1 , wherein the oxide-polishing particles include at least one of silica (SiO 2 ), ceria (CeO 2 ), and alumina (Al 2 O 3 ). 
     
     
         3 . The CMP slurry composition of  claim 1 , wherein the oxide-polishing particles have a grain size ranging from about 30 nm to about 120 nm. 
     
     
         4 . The CMP slurry composition of  claim 1 , wherein the oxidant comprises at least one of hydrogen peroxide, superoxide, dioxygenyl, ozone, ozonide, peroxide, fluorine, chlorine, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, chromium trioxide, pyridinium chlorochromate, chromate, dichromate, chromium compound, potassium permanganate, permanganate, sodium perborate, nitrous oxide, 2,2′-dipyridisulfide, lead dioxide(PbO 2 ), manganese dioxide(MnO 2 ), copper oxide(CuO), ferric trichloride(FeCl 3 ), perchloric acid (HClO 4 ), ferric nitrate(Fe(NO) 3 ), sulfate, and potassium persulfate,(K 2 S 2 O 8 ). 
     
     
         5 . The CMP slurry composition of  claim 1 , wherein the polishing regulator comprises at least one of organic acid, inorganic acid, nitric acid, nitrate, sulfuric acid, peroxydisulfuric acid, peroxymonosulfuric acid, sulfonic acid, acetic acid, citric acid, formic acid, gluconic acid, lactic acid, oxalic acid, tartaric acid, carboxylic acid, chloric acid, chlorous acid, hypochlorous acid, perchloric acid, halogen oxoacid, ascorbic acid, vinylogous carboxylic acid, amino acid, histidine, glycine, arginine, hydrochloric acid, fluoric acid, and phosphoric acid. 
     
     
         6 . The CMP slurry composition of  claim 1 , wherein the surfactant is anionic or non-ionic. 
     
     
         7 . The CMP slurry composition of  claim 1 , wherein the surfactant comprises at least one of lauryl myristyl alcohol series, methyl-oxirane polymer series, whose hydrophile lipophile balance (HLB) is 12 or higher, ethylenediamine, ethoxylated and propoxylated alcohol series, 2-methyloxirane, oxirane series, polyethylene glycol, and polysorbate series. 
     
     
         8 . The CMP slurry composition of  claim 1 , wherein the surfactant comprises at least one of benzalkonium chloride, alkyl benzene sulfonate, phemerol chloride, ammonium lauryl sulfate, sodium lauryl ether sulfate, sodium myreth sulfate, dioctyl sodium sulfosuccinate, perfluorooctanesulfonate, perfluorobutanesulfonate, linear alkylbenzene sulfonate, sodium stearate, sodium lauroyl sarcosinate, cetyl trimethylammonium bromide, cetyl trimethylammonium chloride, perfluorononanoate, perfluorooctanoate, octenidine dihydrochloride, 5-bromo-5-nitro-1,3-dioxane, dimethyl dioctadecylammonium chloride, cetrimonium bromide, dioctadecyldimethylammonium bromide, octaethylene glycol monododecyl ether, glyceryl laurate, and polyethoxylated tallow amine. 
     
     
         9 . The CMP slurry composition of  claim 1 , wherein the pH regulator includes at least one acidic material comprising one of poly acrylic acid, carboxylic acid, nitric acid, sulfuric acid and sulfonic acid or at least one basic material comprising one of potassium hydroxide, sodium hydroxide, ammonia water, tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabuthylammonium hydroxide. 
     
     
         10 . The CMP slurry composition of  claim 1 , wherein the composition has a pH in a range of 2.0˜5.0. 
     
     
         11 - 19 . (canceled) 
     
     
         20 . A chemical mechanical polishing (CMP) slurry composition, comprising:
 a first concentration of oxide-polishing particles;   a second concentration of an oxidant;   a third concentration of a polishing regulator;   a fourth concentration of a surfactant;   a fifth concentration of a pH regulator; and   a sixth concentration of deionized water;   the slurry composition being configured to etch a first type of layer at a different rate than a second type of layer.   
     
     
         21 . The CMP slurry composition of  claim 20 , wherein:
 the first type of layer comprises an organic layer; and   the second type of layer comprises an oxide layer.   
     
     
         22 . The CMP slurry composition of  claim 21 , wherein:
 an etch selectivity of the organic layer with respect to the oxide layer is in a range between 6:1 and 430:1; and   the organic layer is a mask layer.   
     
     
         23 . The CMP slurry composition of  claim 20 , wherein:
 the first concentration ranges from about 0.001% to about 5% by weight;   the second concentration ranges from about 0.1% to about 5% by weight;   the third concentration ranges from 0% to about 5% by weight;   the fourth concentration ranges from 0% to about 3% by weight;   the fifth concentration ranges from 0% to about 3% by weight; and   the sixth concentration ranges from about 79% to about 99.889% by weight.   
     
     
         24 . The composition of  claim 21 , wherein the organic layer comprises at least one of a low silicon layer and a silicon-free layer. 
     
     
         25 . (canceled) 
     
     
         26 . The CMP slurry composition of  claim 1 , wherein the layer comprises at least one of an organic layer, a low silicon layer and a silicon-free layer.