Method for manufacturing molecular memory device

Abstract

According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction and being formed from an insulating material different from the sacrificial film; forming a second wiring on a side surface of the core member; removing a portion of the sacrificial film located immediately below the second wiring; embedding a polymer; and embedding an insulating. The embedding a polymer includes embedding a polymer serving as a memory material between the first wiring and the second wiring. The embedding an insulating member includes embedding an insulating member in a space between the second wirings between the core members.

1 .- 15 . (canceled) 
     
     
         16 . A method for manufacturing a molecular memory device, comprising:
 forming a first wiring layer including a plurality of first wirings extending in a first direction;   forming a plurality of core members on the first wiring layer, the core member extending in a second direction crossing the first direction;   forming a sacrificial film to cover the core member, the sacrificial film being formed from an insulating material different from the core member;   forming a second wiring on a side surface of the core member;   removing a portion of the sacrificial film located immediately below the second wiring;   embedding a molecule serving as a memory material into a space between the first wiring and the second wiring after forming the second wiring and removing the portion of the sacrificial film, the portion of the sacrificial film being removed from the space; and   embedding an insulating member in a space between the second wirings between the core members.   
     
     
         17 . The method according to  claim 16 , further comprising:
 forming a spacer insulating film on a side surface of the second wiring, the spacer insulating film being made of a material different in kind from material forming the insulating member.   
     
     
         18 . The method according to  claim 16 , wherein the forming the second wiring includes:
 forming a seed layer on the sacrificial film;   forming a metal film on the seed layer, the metal film being formed from a material different from a material which forms the seed layer; and   etching back the metal film and the seed layer, and leaving a portion of the metal film and a portion of the seed layer located on the side surface of the core member.   
     
     
         19 . The method according to  claim 16 , wherein the removing the portion of the sacrificial film located immediately below the second wiring includes performing a wet etching. 
     
     
         20 . The method according to  claim 19 , wherein the sacrificial film is formed from silicon oxide, the core member is formed from silicon nitride, and the performing the wet etching includes using an etching solution including hydrofluoric acid. 
     
     
         21 . The method according to  claim 16 , wherein
 the second wiring is formed from a material different from material of the first wiring, and   a linker is provided at one end of the molecule.   
     
     
         22 . The method according to  claim 21 , wherein the molecule is a polymer. 
     
     
         23 . The method according to  claim 16 , wherein the embedding a molecule includes:
 applying a solution dispersed with the molecule in a solvent; and   drying the solution.   
     
     
         24 . The method according to  claim 16 , wherein distance between the second wirings between adjacent ones of the core members is longer than twice film thickness of the sacrificial film. 
     
     
         25 . The method according to  claim 16 , wherein the embedding an insulating member includes:
 forming an insulating film to cover the core members and the second wiring by depositing an insulating material different from the insulating material forming the core member; and   removing a portion of the insulating film formed on an upper surface of the core member and the second wiring by performing planarization processing using the core member as a stopper.   
     
     
         26 . The method according to  claim 16 , wherein a portion of the sacrificial film located between a lower portion of the core member and a lower portion of the second wiring is removed, in the removing the portion of the sacrificial film located immediately below the second wiring. 
     
     
         27 . The method according to  claim 16 , wherein the sacrificial film is formed from silicon oxide, and the core member is formed from silicon nitride. 
     
     
         28 . The method according to  claim 16 , wherein the insulating member is formed from silicon oxide. 
     
     
         29 . The method according to  claim 17 , wherein the sacrificial film and the insulating member are formed from silicon oxide, and the core member and the spacer insulating film are formed from silicon nitride. 
     
     
         30 . The method according to  claim 18 , wherein the seed layer is formed from titanium nitride, and the metal film is formed from tungsten. 
     
     
         31 . The method according to  claim 16 , wherein the plurality of first wirings are formed from tungsten, and the second wiring is formed from molybdenum.