Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a substrate, a semiconductor chip mounted on the substrate, an encapsulating body encapsulating the semiconductor chip on the substrate, the encapsulating body including a top surface and a side surface, and a plurality of heat sink plates embedded in the encapsulating body, each of the heat sink plates including an upper portion and a lower portion, the upper portion having an upper surface exposed from the top surface of the encapsulating body, the lowering portion being embedded in the encapsulating body, each of the plurality of heat sink plates being spaced from the semiconductor chip by the encapsulating body. The lower portion of each of the plurality of the heat sink plates includes a protrusion extending horizontally to an outside of an outer edge of the lower portion.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a semiconductor chip mounted on the substrate;   an encapsulating body encapsulating the semiconductor chip on the substrate, the encapsulating body including a top surface and a side surface; and   a plurality of heat sink plates embedded in the encapsulating body, each of the heat sink plates including an upper portion and a lower portion, the upper portion having an upper surface exposed from the top surface of the encapsulating body, the lowering portion being embedded in the encapsulating body, each of the plurality of heat sink plates being spaced from the semiconductor chip by the encapsulating body,   wherein the lower portion of each of the plurality of the heat sink plates includes a protrusion extending horizontally to an outside of an outer edge of the lower portion so that the upper portion of the heat sink is smaller in surface area than that of the lower portion.   
     
     
         2 . The semiconductor device as recited in  claim 1 , wherein the protrusion is formed along the entire circumference of the hear sink plate. 
     
     
         3 . The semiconductor device as recited in  claim 1 , wherein the protrusion is formed along two opposite sides of the hear sink plate. 
     
     
         4 . The semiconductor device as recited in  claim 1 , wherein the encapsulating body comprises an insulating resin. 
     
     
         5 . The semiconductor device as recited in  claim 1 , wherein the plurality of heat sink plates comprises a metal plate. 
     
     
         6 . The semiconductor device as recited in  claim 1 , wherein the upper surface of the plurality of heat sink plates is substantially coplanar with the top surface of the encapsulating body. 
     
     
         7 . The semiconductor device as recited in  claim 1 , wherein the upper surface of the plurality of heat sink plates comprises a rectangular shape, and the heat sink plates are arranged two-dimensionally at regular intervals. 
     
     
         8 . The semiconductor device as recited in  claim 7 , wherein the plurality of heat sink plates are separated by a plurality of spaces, and the plurality of spaces comprises a portion of the encapsulating body, the portion including a mesh shape in a plan view. 
     
     
         9 . The semiconductor device as recited in  claim 1 , further comprising:
 a heat sink fin attached to the plurality of heat sink plates.