Pattern formation method, lithography apparatus, lithography system, and article manufacturing method

Abstract

A pattern forming method includes: a first step of forming a first pattern to define a first shot arrangement; and a second step of performing an imprint process, thereby forming a second pattern on the imprint material on the first pattern and defining a second shot arrangement. In the second step, the second shot arrangement is defined so as to reduce an overlay error between the first and second shot arrangements by deforming the mold. In the first step, based on information of the estimated second shot arrangement definable on the substrate when the second step is performed after the second pattern formed on the mold is amended by deforming the mold, the first pattern is formed to make an overlay error between the first and second shot arrangements fall within an allowable range.

What is claimed is: 
     
         1 . A method of forming a pattern on a substrate, the method comprising:
 a first step of forming a first pattern in each shot region on the substrate to define a first shot arrangement; and   a second step of performing, in every at least one shot region in the first shot arrangement defined in the first step, an imprint process of curing an imprint material while bringing the imprint material on the substrate and a mold into contact with each other, thereby forming a second pattern on the imprint material on the first pattern and defining a second shot arrangement,   wherein in the second step, the second shot arrangement is defined so as to reduce an overlay error between the first shot arrangement and the second shot arrangement by deforming the mold, and   wherein in the first step, based on information of the estimated second shot arrangement definable on the substrate when the second step is performed after the second pattern formed on the mold is amended by deforming the mold, the first pattern is formed to make an overlay error between the first shot arrangement and the second shot arrangement fall within an allowable range.   
     
     
         2 . The method according to  claim 1 , wherein in the second step, the imprint process is performed simultaneously in a plurality of shot regions in the first shot arrangement defined in the first step. 
     
     
         3 . The method according to  claim 1 , wherein the first step is performed using a projection exposure apparatus configured to project a pattern of a mask to the substrate via a projection optical system and expose the substrate. 
     
     
         4 . The method according to  claim 3 , wherein in the first step, the first pattern is formed to make the overlay error between the first shot arrangement and the second shot arrangement fall within an allowable range by adjusting a position or orientation of the mask or an optical element constituting the projection optical system. 
     
     
         5 . The method according to  claim 1 , wherein information of the second shot arrangement further includes identification data of the mold and an imprint apparatus used in the imprint process. 
     
     
         6 . The method according to  claim 1 , wherein information of the second shot arrangement further includes data of a position of a shot region to undergo the imprint process. 
     
     
         7 . The method according to  claim 1 , wherein the second shot arrangement is based on a measurement result of a shape of the mold used in the imprint process. 
     
     
         8 . The method according to  claim 1 , wherein the second shot arrangement is based on a measurement result of a shape of the mold mounted in the imprint apparatus used in the imprint process. 
     
     
         9 . The method according to  claim 1 , wherein the second shot arrangement is based on a measurement result of the second shot arrangement defined by forming the second pattern by the imprint process. 
     
     
         10 . The method according to  claim 8 , wherein the second shot arrangement is based on a measurement result by a detector arranged in the imprint apparatus used in the imprint process. 
     
     
         11 . The method according to  claim 9 , wherein the second shot arrangement is based on a measurement result by a detector arranged in the imprint apparatus used in the imprint process. 
     
     
         12 . The method according to  claim 1 , wherein information of the second shot arrangement includes a measurement result of a difference between the first shot arrangement and the second shot arrangement on a substrate on which a pattern has been formed previously. 
     
     
         13 . A lithography apparatus of forming a first pattern in each shot region on a substrate, comprising:
 an obtaining unit configured to perform, in every at least one shot region on the first pattern, an imprint process of curing an imprint material while bringing the imprint material on the substrate and a mold into contact with each other, thereby forming a second pattern, and obtaining information of an estimated second shot arrangement formable by performing an imprint process of forming the second pattern; and   a controller configured to, based on the information of the second shot arrangement obtained by said obtaining unit, form the first pattern, define a first shot arrangement, and form the first pattern to become the defined shot arrangement,   wherein the information of the second shot arrangement is information of an estimated shot arrangement definable on the substrate by performing an imprint process of forming a second pattern after a second pattern formed on the mold is amended by deforming the mold.   
     
     
         14 . The apparatus according to  claim 13 , wherein the information of the second shot arrangement includes a pattern shape formed in the mold. 
     
     
         15 . A lithography system of forming a pattern on a substrate, comprising:
 a lithography apparatus configured to form a first pattern in each shot region on the substrate and define a first shot arrangement; and   an imprint apparatus configured to perform, in every at least one shot region in the defined first shot arrangement, an imprint process of curing a resin while bringing a mold into contact with the resin, thereby forming a second pattern on the resin on the first pattern and defining a second shot arrangement,   wherein based on information of the estimated second shot arrangement definable on the substrate when the imprint process is performed, said lithography apparatus forms the first pattern to make an overlay error between the first shot arrangement and the second shot arrangement fall within an allowable range, and   wherein the information of the second shot arrangement is information of an estimated shot arrangement definable on the substrate by performing an imprint process of forming a second pattern after a second pattern formed on the mold is amended by deforming the mold.   
     
     
         16 . A method of manufacturing an article, the method comprising:
 forming a pattern on a substrate by using a lithography system; and   processing the substrate, on which the pattern has been formed, to manufacture the article,   the lithography system including:   a lithography apparatus configured to form a first pattern in each shot region on the substrate and define a first shot arrangement; and   an imprint apparatus configured to perform, in every at least one shot region in the defined first shot arrangement, an imprint process of curing a resin while bringing a mold into contact with the resin, thereby forming a second pattern on the resin on the first pattern and defining a second shot arrangement,   wherein based on information of the estimated second shot arrangement definable on the substrate when the imprint process is performed, the lithography apparatus forms the first pattern to make an overlay error between the first shot arrangement and the second shot arrangement fall within an allowable range, and   wherein the information of the second shot arrangement is information of an estimated shot arrangement definable on the substrate by performing an imprint process of forming a second pattern after a second pattern formed on the mold is amended by deforming the mold.