VERTICALLY STRUCTURED LED BY INTEGRATING NITRIDE SEMICONDUCTORS WITH Zn(Mg,Cd,Be)O(S,Se) AND METHOD FOR MAKING SAME

Abstract

A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn 1-a-b-c Mg a Cd b Be c O 1-p-q S p Se q , wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

1 . A light emitting diode (LED), comprising:
 a nitride semiconductor light emitting component containing at least a p-type nitride semiconductor and an n-type nitride semiconductor, the nitride semiconductor light emitting component having a positive side and a negative side;   a conductive Zn(Mg,Cd,Be)O(S,Se) assembly attached to the positive side of the nitride semiconductor light emitting component;   a positive electrode coupled to the conductive Zn(Mg,Cd,Be)O(S,Se) assembly; and   a negative electrode coupled to the negative side of the nitride semiconductor light emitting component.   
     
     
         2 . The LED of  claim 1 , further comprising a further conductive Zn(Mg,Cd,Be)O(S,Se) assembly attached to the negative side of the nitride semiconductor light emitting component, with the negative electrode coupled to the negative side of the nitride semiconductor light emitting component by way of the further conductive Zn(Mg,Cd,Be)O(S,Se) assembly. 
     
     
         3 . The LED of  claim 1 , wherein said Zn(Mg,Cd,Be)O(S,Se) represents any of the group II-VI semiconductors satisfying a formula Zn 1-a-b-c Mg a Cd b Be c O 1-p-q S p Se q , wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1. 
     
     
         4 . The LED of  claim 1 , wherein the nitride semiconductor light emitting component comprises:
 an n-type nitride semiconductor;   a nitride active region on the n-type nitride semiconductor; and   a p-type nitride semiconductor on the nitride active region.   
     
     
         5 . The LED of  claim 1 , wherein the nitride semiconductors satisfy the formula Al x Ga y In 1-x-y N, inclusive of x=0, y=0, and x=y=0. 
     
     
         6 . The LED of  claim 1 , wherein said nitride semiconductor light emitting component is configured to emit infrared, red, yellow, green, blue, violet, or ultraviolet portion of the electromagnetic spectrum. 
     
     
         7 . The LED of  claim 1 , wherein the conductive Zn(Mg,Cd,Be)O(S,Se) assembly comprises at least one conductive Zn(Mg,Cd,Be)O(S,Se) layer. 
     
     
         8 . The LED of  claim 7 , wherein the conductive Zn(Mg,Cd,Be)O(S,Se) layer is doped with one or several elements from a group including Ga, Al, In, B, Tl, Zn, Cu, Ag, Au, C, Si, Ge, N, P, As, Sb, Pb, F, Cl, Br, and I. 
     
     
         9 . The LED of  claim 1 , wherein at least one of the conductive Zn(Mg,Cd,Be)O(S,Se) assembly and the further conductive Zn(Mg,Cd,Be)O(S,Se) assembly includes Zn(Mg,Cd,Be)O(S,Se)-hosted phosphors for color conversion or blending. 
     
     
         10 . The LED of  claim 9 , wherein the Zn(Mg,Cd,Be)O(S,Se)-hosted phosphors include at least one of transition metals or rare earth ions in the periodic table of elements. 
     
     
         11 . The LED of  claim 1 , wherein at least one surface or layer interface is a roughened surface or layer interface for light extraction enhancement. 
     
     
         12 . The LED of  claim 2 , wherein the further conductive Zn(Mg,Cd,Be)O(S,Se) assembly contains at least a Zn(Mg,Cd,Be)O(S,Se) layer. 
     
     
         13 . The LED of  claim 1 , wherein one of the electrodes is used as a light reflector. 
     
     
         14 .- 23 . (canceled)