Manufacturing apparatus

Abstract

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

1 . A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
 a transfer chamber including a substrate transfer mechanism;   a first sputtering deposition chamber including one sputtering cathode;   a second sputtering deposition chamber including one sputtering cathode;   a third sputtering deposition chamber including one sputtering cathode;   a fourth sputtering deposition chamber including two or more sputtering cathodes;   a fifth sputtering deposition chamber including two or more sputtering cathodes; and   a process chamber for performing a process other than sputtering,   wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber, and   wherein the first sputtering deposition chamber deposits at least one layer of an oxide film, a nitride film, and a semiconductor film included in the multi-layered film.   
     
     
         2 . A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
 a transfer chamber including a substrate transfer mechanism;   a first sputtering deposition chamber including one sputtering cathode;   a second sputtering deposition chamber including one sputtering cathode;   a third sputtering deposition chamber including one sputtering cathode;   a fourth sputtering deposition chamber including two or more sputtering cathodes;   a fifth sputtering deposition chamber including two or more sputtering cathodes; and   a process chamber for performing a process other than sputtering,   wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,   wherein the multi-layered film includes a first film that includes a metal film having a thickness not smaller than 10 nm, a second film that includes a metal film having a thickness not smaller than 10 nm, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and   wherein the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.   
     
     
         3 . The manufacturing apparatus according to  claim 1 , wherein the transfer chamber includes a substrate transfer robot for transferring the substrate between the transfer chamber and the first to fifth deposition chambers. 
     
     
         4 . The manufacturing apparatus according to  claim 1 , wherein the transfer chamber is maintained in a vacuum. 
     
     
         5 . The manufacturing apparatus according to  claim 1 , wherein the process chamber is one for removing a thin film formed on or over the substrate, with plasma, an ion beam, an atom beam, a molecular beam, or a gas cluster beam. 
     
     
         6 . The manufacturing apparatus according to  claim 1 , wherein the process chamber is one for forming a thin film on a thin film formed on or over the substrate, by a chemical vapor deposition method. 
     
     
         7 . The manufacturing apparatus according to  claim 1 , wherein the process chamber is one for causing a thin film formed on or over the substrate to chemically react in gas, neutral active species, ions, or a mixed atmosphere thereof. 
     
     
         8 . The manufacturing apparatus according to  claim 1 , wherein the process chamber is one for heating, cooling, or heating and cooling the substrate. 
     
     
         9 . The manufacturing apparatus according to  claim 1 , wherein the first sputtering deposition chamber forms an oxide film included in the multi-layered film. 
     
     
         10 . The manufacturing apparatus according to  claim 2 , wherein the third sputtering deposition chamber forms the third film. 
     
     
         11 . The manufacturing apparatus according to  claim 1 ,
 wherein the multi-layered film further includes a magnetization fixing layer and a magnetization free layer which includes a plurality of films, the magnetization fixing layer and the magnetization free layer being disposed so as to sandwich at least one layer of the oxide film, the nitride film, and the semiconductor film,   wherein the fourth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization fixing layer, and   wherein the fifth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization free layer.   
     
     
         12 . The manufacturing apparatus according to  claim 2 ,
 wherein the multi-layered film further includes a magnetization fixing layer and a magnetization free layer which includes a plurality of films, the magnetization fixing layer and the magnetization free layer being disposed so as to sandwich the third film,   wherein the fourth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization fixing layer, and   wherein the fifth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization free layer.   
     
     
         13 . A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
 a transfer chamber including a substrate transfer mechanism;   a first sputtering deposition chamber including one sputtering cathode;   a second sputtering deposition chamber including one sputtering cathode;   a third sputtering deposition chamber including one sputtering cathode;   a fourth sputtering deposition chamber including two or more sputtering cathodes;   a fifth sputtering deposition chamber including two or more sputtering cathodes; and   a process chamber for performing a process other than sputtering,   wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,   wherein the multi-layered film includes a first film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film in the multi-layered film, a second film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and   wherein the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.   
     
     
         14 . The manufacturing apparatus according to  claim 13 , wherein the third sputtering deposition apparatus forms the third film.