Method of making double-sided wavelength converter and light generating device using same

Abstract

A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED). In some constructions a first region of the electroluminescent element is substantially covered with a first portion of a window layer of the wavelength converter while a second region of the electroluminescent device, but not the first region, is substantially covered with at least a portion of the first photoluminescent element of the wavelength converter.

We claim: 
     
         1 . A method of forming a semiconductor device, comprising:
 attaching a wavelength converter element to an electroluminescent device, the wavelength converter element comprising a stack of semiconductor layers, the stack of semiconductor layers comprising a first photoluminescent element and a window layer;   substantially covering a first region of the electroluminescent element with a first portion of the window layer of the wavelength converter; and   substantially covering a second region of the electroluminescent device, but not the first region of the electroluminescent device, with at least a portion of the first photoluminescent element of the wavelength converter.   
     
     
         2 . A method as recited in  claim 1 , wherein the stack of semiconductor layers further comprises a second photoluminescent element, the method further comprising substantially covering a third region of the electroluminescent device, but not the first or second regions of the electroluminescent device, with the second photoluminescent element of the wavelength converter element. 
     
     
         3 . A method as recited in  claim 2 , further comprising covering the first region with the second photoluminescent element. 
     
     
         4 . A method as recited in  claim 1 , further comprising disposing a non-epitaxial material on at least one side of the first portion of the window layer. 
     
     
         5 . A method as recited in  claim 4 , further comprising disposing non-epitaxial material on two sides of the first portion of the window layer. 
     
     
         6 . A method as recited in  claim 1 , further comprising etching a portion of the first photoluminescent element up to an etch stop layer to expose the first portion of the window layer. 
     
     
         7 . A method as recited in  claim 6 , wherein the stack of semiconductor layers further comprises a second photoluminescent element, further comprising etching a portion of a second photoluminescent element. 
     
     
         8 . A method as recited in  claim 1 , wherein attaching the wavelength converter element to the electroluminescent device comprises adhering the wavelength converter element to the electroluminescent device using adhesive. 
     
     
         9 . A method as recited in  claim 1 , wherein attaching the wavelength converter element to the electroluminescent device comprises directly bonding the wavelength converter element to the electroluminescent device.