Light-emitting device and light-emitting array

Abstract

A light-emitting device includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion; an opening penetrating the first portion from the first surface and having a first width; a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression includes a second width greater than the first width, and the depression includes a bottom to expose the second surface, and an electrode located in the depression and corresponding to the opening.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion;   an opening penetrating the first portion of the first semiconductor from the first surface and having a first width;   a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression has a second width greater than the first width and comprises a bottom to expose the second surface; and   an electrode located in the depression and corresponding to the opening.   
     
     
         2 . The light-emitting device of  claim 1 , further comprising an insulative structure filling the depression and covering the electrode. 
     
     
         3 . The light-emitting device of  claim 2 , wherein the electrode is connected to the second surface. 
     
     
         4 . The light-emitting device of  claim 3 , further comprising a wiring electrode formed in the depression and connecting to the electrode. 
     
     
         5 . The light-emitting device of  claim 3 , wherein the insulative structure separates the electrode, the active layer, and the second semiconductor layer. 
     
     
         6 . The light-emitting device of  claim 2 , further comprising a conductive structure connecting to the second semiconductor layer wherein the conductive structure comprises a conductive layer electrically connecting with the second semiconductor layer and a barrier covering the second semiconductor layer. 
     
     
         7 . The light-emitting device of  claim 6 , wherein the conductive layer is a metal having reflectivity and comprising nickel (Ni), platinum (Pt), palladium (Pd), silver (Ag), chromium (Cr), or combinations thereof, and the barrier comprises titanium (Ti), tungsten (W), platinum (Pt), titanium tungsten (TiW), or combinations thereof. 
     
     
         8 . The light-emitting device of  claim 6 , wherein the insulative structure is below the second semiconductor and the conductive structure comprises conductive channels penetrating the insulative layer and connecting to the second semiconductor layer. 
     
     
         9 . The light-emitting device of  claim 6 , further comprising a metal reflective layer below the conductive structure and the insulative structure, a conductive joining layer below the metal reflective layer, and a conductive substrate below the conductive joining layer. 
     
     
         10 . The light-emitting device of  claim 1 , wherein the electrode comprises at least one of wiring electrodes and an extensive electrode extending from the wiring electrode. 
     
     
         11 . The light-emitting device of  claim 10 , wherein the wiring electrode is located at a corner of the light-emitting device, and the extensive electrode extends in a direction far away from the wiring electrode, or the wiring electrode is located at a corner of the light-emitting device, and the extensive electrode extends along surroundings of the light-emitting device, or the wiring electrode is located at a geometric center of the light-emitting device and the extensive electrode comprises a plurality of radial branches extending from the wiring electrode, or the wiring electrode comprises a first electrode and a second electrode on a side of the light-emitting device, and the extensive electrode comprises a plurality of radial branches extending from the first electrode and the second electrode to an opposite side, opposite to the side, and a connective electrode connecting with the first electrode and the second electrode. 
     
     
         12 . The light-emitting device of  claim 1 , wherein the first surface of the first semiconductor layer is devoid of a structure shielding light emitted from the active layer 
     
     
         13 . The light-emitting device of  claim 1 , wherein the first semiconductor layer comprises an n-type semiconductor layer and the second semiconductor layer comprises a p-type semiconductor layer. 
     
     
         14 . The light-emitting device of  claim 1 , wherein a size of the light-emitting device is 1 mil to 70 mils. 
     
     
         15 . A light-emitting array, comprising:
 a substrate comprising an upper surface;   a plurality of light-emitting units on the upper surface of the substrate wherein each of the light-emitting units comprises a first surface and a second surface opposite to the first surface toward to the upper surface;   an insulative layer between the substrate and the light-emitting units and covering the second surface of each of the light-emitting units; and   a wire embedded in the insulative layer, wherein the wire comprises a conductive channel, penetrating the insulative layer and electrically connecting with the second surface and a bridge connecting with the conductive channel, and the bridge electrically connects with two of the light-emitting units via the conductive channel.   
     
     
         16 . The light-emitting array of  claim 15 , wherein the first surface has a first polarity, the second surface comprises a first region with the first polarity and a second region nearer the upper surface than the first region with a second polarity, and the conductive channel electrically connects with the first region or the second region. 
     
     
         17 . The light-emitting array of  claim 16 , wherein the substrate is a conductive substrate, and one of the light-emitting units comprises the conductive channel electrically connecting the second region with the conductive substrate or electrically connecting the first region with the conductive substrate. 
     
     
         18 . The light-emitting array of  claim 16 , further comprising a conductive joining layer between the conductive substrate and the insulative layer. 
     
     
         19 . The light-emitting array of  claim 16 , wherein each of the light emitting units comprises a plurality of the first regions and each of the first regions connects to a plurality of conductive channels. 
     
     
         20 . The light-emitting array of  claim 16 , further comprising an electrode on a surface of the insulative layer opposite to the upper surface, located outside each of the light-emitting units, and electrically connecting with the bridge which electrically connects with the first region or the second region of one of the light-emitting units.