Thermoelectric structure, and thermoelectric device and thermoelectric apparatus including the same

Abstract

A thermoelectric structure includes a graphene layer and a thermoelectric body disposed on the graphene layer, in which the thermoelectric body includes a thermoelectric film including a thermoelectric material, and a quantum dot disposed in the thermoelectric film.

What is claimed is: 
     
         1 . A thermoelectric structure comprising:
 a graphene layer; and   a thermoelectric body disposed on the graphene layer,   wherein the thermoelectric body comprises:
 a thermoelectric film; and 
 a quantum dot disposed in the thermoelectric film. 
   
     
     
         2 . The thermoelectric structure of  claim 1 , wherein the thermoelectric film comprises bismuth (Bi), antimony (Sb), tellurium (Te), selenium (Se) or a combination thereof. 
     
     
         3 . The thermoelectric structure of  claim 1 , wherein the quantum dot comprises a material which generates carriers by light. 
     
     
         4 . The thermoelectric structure of  claim 3 , wherein the material of the quantum dot comprises Si, Cu—In—Ga—Se, CdTe or a combination thereof. 
     
     
         5 . The thermoelectric structure of  claim 1 , wherein the quantum dot comprises a material having composition equal to or less than about 5 volume percent based on a material of the thermoelectric film. 
     
     
         6 . The thermoelectric structure of  claim 1 , wherein the quantum dot has a diameter equal to or less than about 300 nanometers. 
     
     
         7 . The thermoelectric structure of  claim 2 , wherein the thermoelectric film further comprises Ag, Cu, Pb, I, CI, Br or a combination thereof. 
     
     
         8 . The thermoelectric structure of  claim 1 , wherein the thermoelectric film is an epitaxial film, which is epitaxially grown on the graphene layer. 
     
     
         9 . A thermoelectric device comprising:
 a graphene layer;   a first thermoelectric body disposed on the graphene layer; and   an upper electrode disposed on the first thermoelectric body,   wherein the first thermoelectric body comprises:
 a thermoelectric film; and 
 a quantum dot disposed in the thermoelectric film. 
   
     
     
         10 . The thermoelectric device of  claim 9 , wherein the thermoelectric film comprises bismuth (Bi), antimony (Sb), tellurium (Te), selenium (Se) or a combination thereof. 
     
     
         11 . The thermoelectric device of  claim 9 , wherein the quantum dot comprises Si, Cu—In—Ga—Se, CdTe or a combination thereof. 
     
     
         12 . The thermoelectric device of  claim 9 , wherein the quantum dot comprises a material having composition which is equal to or less than about 5 volume percent based on a material of the thermoelectric film. 
     
     
         13 . The thermoelectric device of  claim 9 , wherein the quantum dot has a diameter equal to or less than about 300 nanometers. 
     
     
         14 . The thermoelectric device of  claim 9 , further comprising:
 a second thermoelectric body having a different polarity from the first thermoelectric body,   wherein each of the graphene layer and the upper electrode are divided into a plurality of portions, and   the first thermoelectric body and the second thermoelectric body are connected to a same portion of the graphene layer or a same portion of the upper electrode.   
     
     
         15 . A thermoelectric apparatus comprising:
 a thermoelectric device comprising:
 a graphene layer; 
 a first thermoelectric body disposed on the graphene layer; and 
 an upper electrode disposed on the first thermoelectric body, 
 wherein the first thermoelectric body comprises:
 a thermoelectric film; and 
 a quantum dot disposed in the thermoelectric film. 
 
   
     
     
         16 . The thermoelectric apparatus of  claim 15 , wherein the thermoelectric film comprises bismuth (Bi), antimony (Sb), tellurium (Te), selenium (Se) or a combination thereof. 
     
     
         17 . The thermoelectric apparatus of  claim 15 , wherein the quantum dot comprises Si, Cu—In—Ga—Se, CdTe or a combination thereof. 
     
     
         18 . The thermoelectric apparatus of  claim 15 , wherein the quantum dot comprises a material having composition which is equal to or less than about 5 volume percent based on a material of the thermoelectric film. 
     
     
         19 . The thermoelectric apparatus of  claim 15 , wherein the quantum dot has a diameter equal to or less than about 300 nanometers. 
     
     
         20 . The thermoelectric apparatus of  claim 15 , wherein the thermoelectric device further comprises:
 a second thermoelectric body having a different polarity from the first thermoelectric body,   wherein each of the graphene layer and the upper electrode are divided into a plurality of portions, and   the first thermoelectric body and the second thermoelectric body are connected to a same portion of the graphene layer or a same portion of the upper electrode.