Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Abstract

There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.

What is claimed is: 
     
         1 . A solid-state imaging device, comprising:
 a semiconductor substrate;   a plurality of pixels configured to be located on the semiconductor substrate, each pixel which has a photoelectric conversion unit, a color filter being located over the photoelectric conversion unit and a microlens being located over the photoelectric conversion unit;   a light shielding film configured to be located between the color filters; and   a film configured to be located between the color filter and the light shielding film.   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the film extends under the color filter. 
     
     
         3 . The solid-state imaging device according to  claim 1 , wherein the film has a refraction index lower than that of the color filter. 
     
     
         4 . The solid-state imaging device according to  claim 1 , wherein the film includes at least silicon material. 
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein the film covers the light shielding film.