Method for fabricating semiconductor device and the semiconductor device

Abstract

The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO 2 film and an Al 2 O 3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

1 . A semiconductor device including GaN that composes a semiconductor layer comprising:
 a nitride layer containing GaN that composes the semiconductor layer; and   a gate insulating film formed on the nitride layer, wherein   the gate insulating film includes at least one film selected from the group consisting of a SiO 2  film formed by using microwave plasma generated with microwaves at a frequency of 2.45 GHz by using a radial line slot antenna and an Al 2 O 3  film formed with microwave plasma generated with microwaves at a frequency of 2.45 GHz by using the radial line slot antenna.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the nitride layer includes a GaN layer and an AlGaN layer