Substrate polishing apparatus, substrate polishing method, and apparatus for regulating temperature of polishing surface of polishing pad used in polishing apparatus
Abstract
An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.
Claims
exact text as granted — not AI-modified1 - 24 . (canceled)
25 . A substrate polishing method, comprising:
before polishing of a substrate, placing a pad-temperature regulator on a polishing surface of a polishing pad to regulate a temperature of the polishing surface at a first temperature; bringing the substrate into contact with the polishing surface of the polishing pad to start polishing of the substrate; after starting of the substrate polishing, controlling the pad-temperature regulator on the polishing surface of the polishing pad so as to regulate the temperature of the polishing surface at a second temperature.
26 . The substrate polishing method according to claim 25 , wherein the first temperature is higher than the second temperature.
27 . The substrate polishing method according to claim 25 , further comprising:
after polishing of the substrate with the polishing surface at the second temperature, further polishing the substrate while controlling the pad-temperature regulator on the polishing surface of the polishing pad so as to regulate the temperature of the polishing surface at a third temperature.
28 . The substrate polishing method according to claim 25 , further comprising:
before regulating the temperature of the polishing surface, changing PID parameter of the pad-temperature regulator according to a target temperature of the polishing surface.
29 . The substrate polishing method according to claim 25 , wherein polishing of the substrate comprises polishing of the substrate having a Cu film formed thereon.
30 . The substrate polishing method according to claim 25 , wherein polishing of the substrate comprises polishing of the substrate having a dielectric film for use in STI.
31 . The substrate polishing method according to claim 25 , wherein the pad-temperature regulator regulates the temperature of a plurality of zones in the polishing surface of the polishing pad individually.
32 . A pad-temperature regulating apparatus for regulating a temperature of a polishing surface of a polishing pad for use in a substrate polishing apparatus, said pad-temperature regulating apparatus comprising:
a solid member having a fluid passage formed therein and having a contact surface which is brought into contact with the polishing surface of the polishing pad; and a support structure configured to support said solid member while allowing said solid member to pivot in a radial direction and a circumferential direction of the polishing pad.
33 . The pad-temperature regulating apparatus according to claim 32 , wherein said contact surface is made of SiC or alumina.
34 . The pad-temperature regulating apparatus according to claim 32 , wherein said solid member is placed in contact with the polishing surface by its own weight.
35 . The pad-temperature regulating apparatus according to claim 32 , further comprising:
a raising mechanism capable of raising up said solid member to an upright position at a periphery of said polishing pad so that said solid member does not hinder replacement of the polishing pad.Join the waitlist — get patent alerts
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