Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer.

1 - 10 . (canceled) 
     
     
         11 . A method for manufacturing a semiconductor apparatus, comprising:
 forming a TaN layer over a first insulating layer;   performing a silane application process of modifying at least a surface layer of the TaN layer to a TaSiN layer by applying a Si-containing gas;   forming an interlayer insulating layer over the first insulating layer and the TaSiN layer; and   forming a plurality of via plugs having ends coupled to the TaSiN layer in the interlayer insulating layer.   
     
     
         12 . The method for manufacturing a semiconductor apparatus according to  claim 11 ,
 wherein the silane application process comprises forming the TaSiN layer in such a manner that a composition ratio of the TaSiN layer changes so that a Si concentration becomes higher toward a surface layer of the TaN layer.   
     
     
         13 . The method for manufacturing a semiconductor apparatus according to  claim 11 ,
 wherein the silane application process comprises forming a SiN layer over the TaN layer and forming the TaSiN layer over an interface between the SiN layer and the TaN layer.   
     
     
         14 . The method for manufacturing a semiconductor device according to  claim 13 , the method comprising:
 in forming a TaN layer, forming the TaN layer over an entire surface of the first insulating layer;   in the silane application process, forming the SiN layer over an entire surface of the TaN layer; and   after the silane application process, patterning the TaSiN layer in the same process as the SiN layer.