Method for hybrid encapsulation of an organic light emitting diode

Abstract

Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

1 . A method for forming an encapsulating structure on an organic light emitting diode (OLED) substrate, comprising:
 forming a first layer on a region of a substrate having an OLED structure disposed thereon, the region being defined by a mask;   forming a second layer on the first layer in the region defined by the mask, wherein the second layer is formed by supplying a processing gas comprising a HMDSO (hexamethyldisiloxane) gas throughout the formation of the second layer; and   forming a third layer on the second layer in the region defined by the mask.   
     
     
         2 . The method of  claim 1 , wherein the first layer, the second layer and the third layer are formed in the same chamber. 
     
     
         3 . The method of  claim 1 , wherein the second layer comprises:
 a first sublayer having a majority of inorganic materials and a minority of organic materials;   a second sublayer having a majority of organic materials and a minority of inorganic materials; and   a third sublayer having a majority of inorganic materials and a minority of organic materials.   
     
     
         4 . The method of  claim 3 , wherein the first sublayer is formed by providing an oxygen-containing gas to the HMDSO gas at a flow ratio of about 10 or greater. 
     
     
         5 . The method of  claim 3 , wherein the second sublayer is formed by providing the oxygen-containing gas to the HMDSO gas at a flow ratio of less than about 2. 
     
     
         6 . The method of  claim 3 , wherein the third sublayer is formed by providing the oxygen-containing gas to the HMDSO gas at a flow ratio of about 10 or greater. 
     
     
         7 . The method of  claim 1 , wherein the first layer is an inorganic layer. 
     
     
         8 . The method of  claim 1 , wherein the third layer is an inorganic layer. 
     
     
         9 . A method for forming an encapsulating structure on an organic light emitting diode (OLED) substrate, comprising:
 forming a hybrid layer over a region of a substrate having an OLED structure disposed thereon, the region being defined by a mask, wherein the hybrid layer is formed by supplying a processing gas comprising a HMDSO (hexamethyldisiloxane) gas throughout the formation of the hybrid layer, and the hybrid layer comprises:
 a first sublayer having a majority of inorganic materials and a minority of organic materials; 
 a second sublayer having a majority of organic materials and a minority of inorganic materials; and 
 a third sublayer having a majority of inorganic materials and a minority of organic materials. 
   
     
     
         10 . The method of  claim 9 , further comprising:
 before forming the hybrid layer, forming a first layer on the region defined by the mask.   
     
     
         11 . The method of  claim 10 , further comprising:
 forming a second layer on the hybrid layer on the region defined by the mask.   
     
     
         12 . The method of  claim 10 , wherein the first layer is an inorganic layer. 
     
     
         13 . The method of  claim 11 , wherein the second layer is an inorganic layer. 
     
     
         14 . The method of  claim 11 , wherein the first layer, the hybrid layer and the second layer are formed in the same chamber. 
     
     
         15 . The method of  claim 9 , wherein the first sublayer is formed by providing an oxygen-containing gas to the HMDSO gas at a flow ratio of about 10 or greater. 
     
     
         16 . The method of  claim 9 , wherein the second sublayer is formed by providing the oxygen-containing gas to the HMDSO gas at a flow ratio of less than about 2. 
     
     
         17 . The method of  claim 9 , wherein the third sublayer is formed by providing the oxygen-containing gas to the HMDSO gas at a flow ratio of about 10 or greater. 
     
     
         18 . A method for forming an encapsulating structure on an organic light emitting diode (OLED) substrate, comprising:
 forming a first layer on a region of a substrate having an OLED structure disposed thereon in a processing chamber, the region being defined by a mask;   forming a second layer on the first layer in the region defined by the mask in the processing chamber; and   forming a third layer on the second layer in the region defined by the mask in the processing chamber.   
     
     
         19 . The method of  claim 18 , wherein the second layer is formed by supplying a processing gas comprising a HMDSO (hexamethyldisiloxane). 
     
     
         20 . The method of  claim 18 , wherein the second layer comprises:
 a first sublayer having a majority of inorganic materials and a minority of organic materials;   a second sublayer having a majority of organic materials and a minority of inorganic materials; and   a third sublayer having a majority of inorganic materials and a minority of organic materials.