Semiconductor device and method for manufacturing the same

Abstract

A method for manufacturing a semiconductor device includes forming a device isolation film defining an active region, forming a recess configured to expose a seam contained in the device isolation film by etching the active region and the device isolation film, forming a sacrificial film to fill the exposed seam, and forming a gate at a lower part of the recess.

1 .- 12 . (canceled) 
     
     
         13 . A semiconductor device comprising:
 a device isolation film to define an active region;   a gate recess exposing the active region and the device isolation film to define a gate region; and   a gate formed in the gate recess,   wherein the device isolation film includes a first insulation film and a sacrificial film filling a seam in the first insulation film.   
     
     
         14 . The semiconductor device according to  claim 13 , wherein the sacrificial film includes a nitride film or silicon. 
     
     
         15 . The semiconductor device according to  claim 13 , wherein the first insulation film includes a high temperature oxide (HTO) film. 
     
     
         16 . The semiconductor device according to  claim 13 , wherein the gate recess includes a fin structure in which the active region under the gate is protruded higher than the device isolation film under the gate.