Substrate processing apparatus

Abstract

A substrate processing apparatus can easily control a plasma intensity distribution in a processing space. A substrate processing apparatus 10 generates an electric field E in a processing space S between a susceptor 12 to which a high frequency power is applied and an upper electrode 13 provided to face the susceptor 12, and also performs a plasma process on a wafer W mounted on the susceptor 12 with plasma generated by the electric field E. The substrate processing apparatus 10 includes multiple electromagnets 20 arranged on a top surface 13 a of the upper electrode 13 opposite to the processing space S, and each of the electromagnets 20 is radially arranged with respect to a central portion C of the upper electrode 13 facing a central portion of the wafer W.

We claim: 
     
         1 . A substrate processing apparatus that generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and that performs a plasma process on a substrate mounted on the lower electrode with plasma generated by the electric field, the substrate processing apparatus comprising:
 multiple electromagnets arranged on a top surface of the upper electrode opposite to the processing space,   wherein each of the electromagnets is radially arranged with respect to a central portion of the upper electrode facing a central portion of the substrate.   
     
     
         2 . The substrate processing apparatus of  claim 1 ,
 wherein the multiple electromagnets are divided into multiple electromagnet groups, and in each of the electromagnet groups, intensity of a magnetic field generated by each of the electromagnets and/or a magnetic pole of each of the electromagnets is controlled.   
     
     
         3 . The substrate processing apparatus of  claim 1 ,
 wherein the multiple electromagnets are divided into a first electromagnet group, a second electromagnet group, and a third electromagnet group,   the first electromagnet group includes the electromagnets facing the central portion of the substrate, the second electromagnet group includes the electromagnets facing a peripheral portion of the substrate, and the third electromagnet group includes the electromagnets arranged on an outside of the second electromagnet group with respect to the central portion of the upper electrode without facing the substrate, and   magnetic poles on the processing space side of the electromagnets belonging to the first electromagnet group are identical to each other, magnetic poles on the processing space side of the electromagnets belonging to the second electromagnet group are identical to each other, and magnetic poles on the processing space side of the electromagnets belonging to the third electromagnet group are identical to each other.   
     
     
         4 . The substrate processing apparatus of  claim 3 ,
 wherein the electromagnets belonging to each of the first electromagnet group and the second electromagnet group are spaced apart from each other at equal distances, and the electromagnets belonging to the third electromagnet group are arranged in a circular ring shape around the central portion of the upper electrode.   
     
     
         5 . The substrate processing apparatus of  claim 4 ,
 wherein total magnetic flux generated by the electromagnets belonging to the third electromagnet group is about 8 to 12 times greater than total magnetic flux generated by the electromagnets belonging to each of the first electromagnet group and the second electromagnet group.   
     
     
         6 . The substrate processing apparatus of  claim 1 ,
 wherein intensity of a magnetic field generated by each of the electromagnets and/or a magnetic pole of each of the electromagnets are controlled depending on conditions of the plasma process to be performed on the substrate.   
     
     
         7 . A substrate processing apparatus that generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and that performs a plasma process on a substrate mounted on the lower electrode with plasma generated by the electric field, the substrate processing apparatus comprising:
 multiple electromagnets arranged on a top surface of the upper electrode on the opposite side of the processing space;   a first high frequency power supply that is configured to supply a high frequency power having a first high frequency and is connected to the lower electrode; and   a second high frequency power supply that is configured to supply a high frequency power having a second high frequency higher than the first high frequency and is connected to the lower electrode,   wherein when the first high frequency power supply supplies the high frequency power having the first high frequency, each of the electromagnets does not generate a magnetic field in the processing space, and   when the second high frequency power supply supplies the second high frequency power having the second high frequency, each of the electromagnets generates a magnetic field in the processing space.   
     
     
         8 . A substrate processing apparatus that generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and that performs a TSV process of forming a through hole in a substrate with plasma generated from a fluorine-containing gas by the electric field, the substrate processing apparatus comprising:
 multiple electromagnets arranged on a top surface of the upper electrode on the opposite side of the processing space,   wherein each of the electromagnets generates a magnetic field such that intensity of the magnetic field at an area facing a peripheral portion of the substrate in the processing space is greater than that of the magnetic field at an area facing a central portion of the substrate in the processing space.