US2014342576A1PendingUtilityA1

Ultraviolet-curable resin material for pattern transfer and magnetic recording medium manufacturing method using the same

Assignee: TOSHIBA KKPriority: Aug 31, 2009Filed: Aug 5, 2014Published: Nov 20, 2014
Est. expiryAug 31, 2029(~3.1 yrs left)· nominal 20-yr term from priority
H10P 14/6538H10P 14/6346H10P 14/687B82Y 10/00G03F 7/0002H01L 21/0212H01L 21/02348H01L 21/02288B82Y 40/00G03F 7/027G11B 5/855
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Claims

Abstract

According to one embodiment, an ultraviolet curing curable resin material for pattern transfer is provided. The resin contains isobornyl acrylate, an acrylate having a fluorene skeleton, a polyfunctional acrylate, and a polymerization initiator.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device comprising:
 bringing a semiconductor substrate and a transparent stamper into contact with each other by a coating layer comprising an uncured ultraviolet-curable resin material for pattern transfer containing isobornyl acrylate, an acrylate having a fluorene skeleton represented by formula (1), a polyfunctional acrylate, and a polymerization initiator, the coating layer being interposed between the semiconductor substrate and the transparent stamper,   
       
         
           
           
               
               
           
         
       
       wherein each of R 1  and R 2  is selected from the group consisting of H, —C 2 H 4 —OCOCH═CH 2 , —C 3 H 6 —OCOCH═CH 2 , —CH 4 H 8 —OCOCH═CH 2 , 
       
         
           
           
               
               
           
         
       
       and each of R 3  and R 4  is selected from the group consisting of H, —CH 3 , —C 2 H 5 , —C 3 H 7 , —C 4 H 9 , —Cl, —F, —Br, —NH 2 , —OH, and —OCOCH═CH 2 ;
 irradiating the coating layer with ultraviolet light, thereby curing the ultraviolet-curable resin material for pattern transfer; and 
 removing the transparent stamper to form, on one surface of the semiconductor substrate, a cured ultraviolet-curable resin material layer for pattern transfer onto which a three-dimensional pattern is transferred. 
 
     
     
         2 . The method of  claim 1 , wherein the ultraviolet-curable resin material contains
 10 to 62% by weight of isobornyl acrylate,   10 to 50% by weight of the acrylate having a fluorene skeleton,   10 to 44% by weight of the polyfunctional acrylate, and   0.1 to 6% by weight of the polymerization initiator.   
     
     
         3 . A method for manufacturing a semiconductor device comprising:
 bringing a semiconductor substrate and a transparent stamper into contact with each other by a coating layer comprising an uncured ultraviolet-curable resin material for pattern transfer containing isobornyl acrylate, an acrylate having a fluorene skeleton represented by formula (1), a polyfunctional acrylate, an acrylate having an adamantane skeleton, and a polymerization initiator, the coating layer being interposed between the semiconductor substrate and the transparent stamper,   
       
         
           
           
               
               
           
         
       
       wherein each of R 1  and R 2  is selected from the group consisting of H, —C 2 H 4 —OCOCH═CH 2 , —C 3 H 6 —OCOCH═CH 2 , —CH 4 H 8 —OCOCH═CH 2 , 
       
         
           
           
               
               
           
         
       
       and each of R 3  and R 4  is selected from the group consisting of H, —CH 3 , —C 2 H 5 , —C 3 H 7 , —C 4 H 9 , —Cl, —F, —Br, —NH 2 , —OH, and —OCOCH═CH 2 ;
 irradiating the coating layer with ultraviolet light, thereby curing the ultraviolet-curable resin material for pattern transfer; and 
 removing the transparent stamper to form, on one surface of the semiconductor substrate, a cured ultraviolet-curable resin material layer for pattern transfer onto which a three-dimensional pattern is transferred. 
 
     
     
         4 . The method of  claim 3 , wherein the acrylate having an adamantane skeleton is present in a weight percent between about 0 and 40.

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