US2014339571A1PendingUtilityA1
Silicon carbide epitaxial wafer and manufacturing method therefor
Est. expiryAug 28, 2029(~3.1 yrs left)· nominal 20-yr term from priority
H10P 14/3451H10P 14/3408H10P 14/2926H10P 14/2904H10P 14/36H10P 14/24H10P 14/20H10D 62/8325H10D 62/124H01L 29/0684H01L 29/1608C30B 25/20C30B 29/36
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Abstract
A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm −1 or less.
Claims
exact text as granted — not AI-modified1 . A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm −1 or less.
2 . The SiC epitaxial wafer according to claim 1 , wherein step bunchings have a length of 100 to 500 μm in [1-100] direction.Join the waitlist — get patent alerts
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