Thin-Film Transistor Sensor and Method of Manufacturing the TFT Sensor

Abstract

According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.

1 - 17 . (canceled) 
     
     
         18 . A thin-film transistor (TFT) sensor, comprising:
 a first bottom gate electrode and a second bottom gate electrode separated from each other by a predetermined distance on a substrate;   an insulation layer on the first and second bottom gate electrodes;   an active layer in a donut shape on the insulation layer, the active layer including a hole for channel separation at the center of the active layer;   an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole; and   a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.   
     
     
         19 . The TFT sensor as claimed in  claim 18 , wherein:
 the active layer has four edges,   the first and second contact holes are symmetrically disposed on two edges, facing each other, from among the four edges of the active layer, and   the source and drain electrodes bury the first and second contact holes and are symmetrically disposed on the two edges, and the first and second bottom gate electrodes are symmetrically formed on the two remaining edges.   
     
     
         20 . The TFT sensor as claimed in  claim 18 , wherein the active layer includes an oxide semiconductor. 
     
     
         21 . The TFT sensor as claimed in  claim 20 , wherein the active layer includes at least one material selected from the group of In, Ga, Zn, Sn, Sb, Ge, HHf, and As. 
     
     
         22 . The TFT sensor as claimed in  claim 18 , wherein the direction of current flowing in the channel is controlled by applying a periodically-swinging voltage to the first and second bottom gate electrodes. 
     
     
         23 . The TFT sensor as claimed in  claim 18 , wherein the active layer is square or rectangular. 
     
     
         24 - 25 . (canceled) 
     
     
         26 . A thin-film transistor (TFT) sensor array comprising TFT sensors arranged by rotating a TFT sensor by a predetermined angle,
 wherein each of the TFT sensors includes:   a first bottom gate electrode and a second bottom gate electrode separated from each other by a predetermined distance on a substrate;   an insulation layer on the first and second bottom gate electrodes;   an active layer in a donut shape on the insulation layer, the active layer including a hole for channel separation at the center of the active layer;   an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole; and   a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.   
     
     
         27 . The TFT sensor array as claimed in  claim 26 , comprising four TFT sensors arranged by rotating a TFT sensor by 90 degrees at a time. 
     
     
         28 . The TFT sensor array as claimed in  claim 26 , comprising four TFT sensors arranged by rotating each of two TFT sensors by 90 degrees. 
     
     
         29 - 34 . (canceled)