US2014332984A1PendingUtilityA1

Adhesive composition, process for producing the same, adhesive film using the same, substrate for mounting semiconductor and semiconductor device

Assignee: HITACHI CHEMICAL CO LTDPriority: Feb 15, 2000Filed: Jul 23, 2014Published: Nov 13, 2014
Est. expiryFeb 15, 2020(expired)· nominal 20-yr term from priority
H10W 72/701H10W 74/129H10W 74/47H10W 70/695H10W 70/69H10W 42/00H10W 40/251C08G 59/18Y10T428/2839C08L 2666/02H05K 1/0271Y10T428/31511Y10T428/287Y10T156/1089C09J 163/00C08L 2666/04C09J 7/35C09J 2463/00C09J 2433/00H01L 23/564H01L 23/14H01L 23/3737C09J 2301/408C09J 7/38C09J 7/10
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Claims

Abstract

Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device in which a semiconductor element and supporting member are adhered to each other by an adhesive layer,
 wherein the area of the semiconductor element is 70% or more of the area of the supporting member,   wherein the adhesive layer is a cured product of an adhesive comprising:
 (a) an epoxy resin having a softening point of 50° C. or more; 
 (b) a curing agent which is a phenolic resin having a hydroxyl equivalent of 150 g/eq or more; and 
 (c) an epoxy group-containing acrylic copolymer having a weight-average molecular weight in a range of 300,000 to 3,000,000, and 
   wherein the adhesive layer further comprises silica.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein a ratio of A/B is 0.24 to 1.0, where A represents a total weight of (a) the epoxy resin and (b) the curing agent, and B represents a weight of (c) the epoxy group-containing acrylic copolymer. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the epoxy resin includes at least one selected from the group consisting of phenol novolak epoxy resin and cresol novolak epoxy resin. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein an equivalents ratio of the epoxy equivalent to the hydroxyl equivalent in the epoxy resin and the phenolic resin is 0.70:0.30 to 0.30:0.70. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the silica is included in the adhesive layer in an amount of more than 0, and up to and including 50 parts by weight, based on 100 parts by weight of the total weight of the epoxy resin and the curing agent. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein said cured product has two phases, a sea phase and an islands phase, and wherein, with a length of the islands phase being represented by S and an area of a cross-section represented by V, the phases satisfy the following relationship:
     S/√V> 3.6.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein said adhesive layer consists of a cured product of an adhesive consisting of said epoxy resin, said curing agent, said epoxy group-containing acrylic copolymer, silica, and optionally a curing accelerator. 
     
     
         8 . The semiconductor device according to  claim 1 , wherein the semiconductor element is connected with the supporting member through wire bonding. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the supporting member is a wiring board. 
     
     
         10 . A semiconductor device, manufactured by a process in which:
 (1) an adhesive layer and a dicing tape are laminated to a semiconductor wafer, and then,   (2) the resultant wafer and adhesive film are cut into a chip, and   (3) (i) a supporting member and (ii) the chip are adhered through said adhesive film, wherein an area of the semiconductor element is 70% or more of the area of the supporting member,   wherein the adhesive layer comprises a cured product of an adhesive composition comprising:
 (a) at least one epoxy resin; 
 (b) a curing agent; and 
 (c) a polymer compound incompatible with at least one of the at least one epoxy resin, and 
   wherein the adhesive layer further comprises silica.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein the supporting member is a wiring board. 
     
     
         12 . The semiconductor device according to  claim 10 , wherein the at least one epoxy resin includes an epoxy resin having a softening point of 50° C. or more; wherein the curing agent is a phenolic resin having a hydroxyl equivalent of 150 g/eq or more; and wherein said polymer compound incompatible with at least one of the at least one epoxy resin is an epoxy group-containing acrylic copolymer having a weight-average molecular weight in a range of 300,000 to 3,000,000. 
     
     
         13 . The semiconductor device according to  claim 12 , wherein the supporting member is a wiring board.

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