Method and system for inline chemical vapor deposition

Abstract

Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.

1 . An inline chemical vapor deposition system, comprising:
 a deposition chamber;   a continuous transport system to transport a substrate along a path through the deposition chamber;   a first deposition module disposed on the path inside the deposition chamber and having at least one deposition station to deposit a buffer layer onto the substrate;   a second deposition module disposed on the path inside the deposition chamber and having at least one deposition station to deposit a window layer onto the buffer layer; and   a third deposition module disposed on the path inside the deposition chamber and having at least one deposition station to deposit a transparent conductive layer onto the window layer,   each of the deposition modules comprising at least one deposition station having a manifold comprising a first precursor port, a pair of second precursor ports and a pair of pumping ports, the first precursor port disposed between the second precursor ports and the pair of second precursor ports disposed between the pumping ports, the first precursor port and the pair of second precursor ports configured for coupling to a first precursor gas source and a second precursor gas source, respectively, the pumping ports configured to couple to a discharge system to exhaust the first and second precursor gases.   
     
     
         2 . The inline chemical vapor deposition system of  claim 1  wherein the substrate is a discrete substrate. 
     
     
         3 . The inline chemical vapor deposition system of  claim 2  wherein the discrete substrate is a glass substrate. 
     
     
         4 . The inline chemical vapor deposition system of  claim 2  wherein the discrete substrate is a wafer. 
     
     
         5 . The inline chemical vapor deposition system of  claim 2  wherein the continuous transport system is configured to transport a plurality of discrete substrates along the path through the deposition chamber and wherein at least one of the discrete substrates is transported through each of the deposition modules simultaneously. 
     
     
         6 . The inline chemical vapor deposition system of  claim 1  wherein the substrate is a web substrate. 
     
     
         7 . The inline chemical vapor deposition system of  claim 1  wherein the at least one deposition station of the first deposition module is configured to deposit one of a cadmium sulfide layer, a zinc sulfide layer and an indium sulfide layer onto the substrate. 
     
     
         8 . The inline chemical vapor deposition system of  claim 1  wherein the at least one deposition station of the second deposition module is configured to deposit an intrinsic zinc oxide layer. 
     
     
         9 . The inline chemical vapor deposition system of  claim 1  wherein the at least one deposition station of the third deposition module is configured to deposit one of an aluminum-doped zinc oxide layer, a gallium-doped zinc oxide layer, a boron-doped zinc oxide layer and an indium tin oxide layer.