Method for Manufacturing Magnetoresistance Component

Abstract

A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure.

What is claimed is: 
     
         1 . A method for manufacturing a magnetoresistance component, comprising:
 providing a substrate;   forming a circuit structure layer comprising an interconnect structure on the substrate, the interconnect structure comprising a metal pad;   forming a dielectric layer on the circuit structure layer;   forming a metal damascene structure in the dielectric layer; and   forming a patterned magnetoresistance component above the metal damascene structure to electrically connect to the metal damascene structure.   
     
     
         2 . The method of  claim 1 , further comprising :
 forming a passivation layer on the patterned magnetoresistance component;   removing a portion of the passivation layer to form an opening exposing the metal pad.   
     
     
         3 . The method of  claim 1 , wherein forming the patterned magnetoresistance component comprises:
 forming at least one opening in the dielectric layer;   forming a magnetoresistance material layer on the dielectric layer covering the at least one opening; and   patterning the magnetoresistance material layer.   
     
     
         4 . The method of  claim 3 , wherein forming the dielectric layer comprises:
 forming a silicon oxide layer;   forming a silicon nitride layer on the silicon oxide layer; and   forming a silicon oxide layer on the silicon nitride layer.   
     
     
         5 . The method of  claim 3 , wherein the at least one opening is located in a scribe line region of the substrate. 
     
     
         6 . The method of  claim 3  wherein the at least one opening is located above the metal pad. 
     
     
         7 . The method of  claim 3 , wherein the at least one opening is located in a magnetoresistance array region. 
     
     
         8 . The method of  claim 3 , wherein a part of the patterned magnetoresistance component is disposed above the dielectric layer. 
     
     
         9 . The method of  claim 3 , wherein the patterned magnetoresistance component is completely disposed above the dielectric layer. 
     
     
         10 . The method of  claim 3 , wherein the patterned magnetoresistance component is formed by patterning the magnetoresistance material layer using an alignment mark.