Methods of making polycrystalline diamond compacts

Abstract

A polycrystalline diamond compact includes a substrate and a polycrystalline diamond table attached to the substrate. The polycrystalline diamond table includes an upper surface and at least one peripheral surface. Diamond grains of the polycrystalline diamond table define a plurality of interstitial regions. The polycrystalline diamond table includes a region having silicon carbide positioned within at least some of the interstitial regions thereof. In an embodiment, the first region extends over only a selected portion of the upper surface and/or at least a portion of the at least one peripheral surface. In another embodiment, the first region substantially contours the upper surface and a chamfer.

1 . A method of fabricating a polycrystalline diamond compact, comprising:
 positioning an at least partially porous polycrystalline diamond body between a silicon-containing material and a substrate, wherein the at least partially porous polycrystalline diamond body exhibits an upper surface, at least one peripheral surface, and a chamfer extending between the upper surface and the at least one peripheral surface;   subjecting the at least partially porous polycrystalline diamond body, the silicon-containing material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region that extends inwardly from the upper surface and the chamfer with silicon from the silicon-containing material.   
     
     
         2 . The method of  claim 1  wherein the substrate includes a metallic infiltrant, and wherein subjecting the at least partially porous polycrystalline diamond body, the silicon-containing material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region that extends inwardly from the upper surface and the chamfer with silicon from the silicon-containing material includes infiltrating a bonding region of the at least partially porous polycrystalline diamond body adjacent to the substrate with the metallic infiltrant. 
     
     
         3 . The method of  claim 1  wherein the first region extends inwardly to about the same depth from the upper surface as from the chamfer. 
     
     
         4 . The method of  claim 1  wherein the first region of the at least partially porous polycrystalline diamond body extends along only a selected portion of the upper surface. 
     
     
         5 . The method of  claim 1  wherein the silicon-containing material only covers a selected portion of the upper surface of the at least partially porous polycrystalline diamond body. 
     
     
         6 . The method of  claim 1 , further comprising masking a selected portion of the upper surface of the at least partially porous polycrystalline diamond body from the silicon-containing material. 
     
     
         7 . The method of  claim 1  wherein the at least partially porous polycrystalline diamond body exhibits an average grain diamond size of 20 μm or less. 
     
     
         8 . The method of  claim 1  wherein the at least partially porous polycrystalline diamond body includes tungsten carbide. 
     
     
         9 . The method of  claim 1  wherein the at least partially porous polycrystalline diamond body exhibits an average grain diamond size of 20 μm or less and includes tungsten carbide. 
     
     
         10 . A method of fabricating a polycrystalline diamond compact, comprising:
 positioning an at least partially porous polycrystalline diamond body between a first infiltrant material and a substrate including a metallic second infiltrant that is different than the first infiltrant material, wherein the at least partially porous polycrystalline diamond body exhibits an upper surface, at least one peripheral surface, and a chamfer extending between the upper surface and the at least one peripheral surface;   subjecting the at least partially porous polycrystalline diamond body, the first infiltrant material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region that extends inwardly from the upper surface and the chamfer with material from the first infiltrant material.   
     
     
         11 . The method of  claim 10  wherein subjecting the at least partially porous polycrystalline diamond body, the first infiltrant material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region that extends inwardly from the upper surface and the chamfer with the material from the first infiltrant material includes infiltrating a bonding region of the at least partially porous polycrystalline diamond body adjacent to the substrate with the metallic second infiltrant. 
     
     
         12 . The method of  claim 10  wherein the first region extends inwardly to about the same depth from the upper surface as from the chamfer. 
     
     
         13 . The method of  claim 10  wherein the first region of the at least partially porous polycrystalline diamond body extends along only a selected portion of the upper surface. 
     
     
         14 . The method of  claim 10  wherein the first infiltrant material only covers a selected portion of the upper surface of the at least partially porous polycrystalline diamond body. 
     
     
         15 . The method of  claim 10  wherein the at least partially porous polycrystalline diamond body exhibits an average grain diamond size of 20 μm or less. 
     
     
         16 . The method of  claim 10  wherein the at least partially porous polycrystalline diamond body exhibits an average grain diamond size of 20 μm or less and includes tungsten carbide. 
     
     
         17 . The method of  claim 10  wherein the first infiltrant material includes a silicon-containing material. 
     
     
         18 . The method of  claim 10  wherein the metallic second infiltrant includes at least one of cobalt, iron, or nickel. 
     
     
         19 . A method of fabricating a polycrystalline diamond compact, comprising:
 positioning an at least partially porous polycrystalline diamond body between a first infiltrant material and a metallic second infiltrant having a composition different than the first infiltrant material, wherein the at least partially porous polycrystalline diamond body exhibits an upper surface, at least one peripheral surface, and a chamfer extending between the upper surface and the at least one peripheral surface;   subjecting the at least partially porous polycrystalline diamond body, the first infiltrant material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region that extends inwardly from the upper surface and the chamfer with material from the first infiltrant material.   
     
     
         20 . The method of  claim 19  wherein the first infiltrant material includes a silicon-containing material, wherein the metallic second infiltrant is included in a substrate, and wherein the metallic second infiltrant includes at least one of cobalt, iron, or nickel. 
     
     
         21 . A method of fabricating a polycrystalline diamond compact, comprising:
 positioning an at least partially porous polycrystalline diamond body between a silicon-containing material and a substrate that is adjacent to a metal-solvent catalyst, wherein the at least partially porous polycrystalline diamond body exhibits an upper surface and at least one peripheral surface, wherein the silicon-containing material extends over only a portion of the upper surface and/or at least a portion of the at least one peripheral surface;   subjecting the at least partially porous polycrystalline diamond body, the silicon-containing material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region of the at least partially porous polycrystalline body that extends along only a portion of the upper surface thereof.   
     
     
         22 . The method of  claim 21  wherein the substrate includes a metallic infiltrant; and wherein subjecting the at least partially porous polycrystalline diamond body, the silicon-containing material, and the substrate to a high-pressure, high-temperature process to infiltrate a first region of the at least partially porous polycrystalline body that extends along only a portion of the upper surface thereof includes infiltrating a bonding region of the at least partially porous polycrystalline diamond body adjacent to the substrate with the metallic infiltrant. 
     
     
         23 . The method of  claim 21  wherein the first region is configured as an annular region. 
     
     
         24 . The method of  claim 21 , further comprising masking a selected portion of the upper surface of the at least partially porous polycrystalline body from the silicon-containing material. 
     
     
         25 . The method of  claim 21  wherein the silicon-containing material includes a plurality of discrete portions that cover only the portion of the upper surface of the at least partially porous polycrystalline diamond body. 
     
     
         26 . The method of  claim 21  wherein the silicon-containing material extends about the at least a portion of the at least one peripheral surface of the at least partially porous polycrystalline diamond body.