Finfet device with a graphene gate electrode and methods of forming same

Abstract

One illustrative device disclosed herein includes at least one fin comprised of a semiconducting material, a layer of gate insulation material positioned adjacent an outer surface of the fin, a gate electrode comprised of graphene positioned on the layer of gate insulation material around at least a portion of the fin, and an insulating material formed on the gate electrode.

1 . A FinFET device, comprising:
 at least one fin comprised of a semiconducting material;   a layer of gate insulation material positioned adjacent an outer surface of said fin;   a gate electrode comprised of graphene positioned on said layer of gate insulation material around at least a portion of said fin; and   an insulating material formed on said gate electrode.   
     
     
         2 . The device of  claim 1 , wherein said semiconducting material is comprised of one of silicon, silicon/germanium, a III-V compound semiconductor material, a II-VI compound semiconductor material, or silicon/carbon or combinations thereof 
     
     
         3 . The device of  claim 1 , wherein said gate insulation material is comprised of silicon dioxide or a high-k insulating material. 
     
     
         4 . The device of  claim 1 , wherein said layer of gate insulation material is positioned on said outer surface of said fin. 
     
     
         5 . The device of  claim 4 , wherein said layer of gate insulation material is positioned on an upper surface and two side surfaces of said fin. 
     
     
         6 . The device of  claim 1 , wherein said gate electrode is positioned above an upper surface and two side surfaces of said fin. 
     
     
         7 . The device of  claim 1 , further comprising at least one conductive contact positioned in said layer of insulating material that is conductively coupled to said gate electrode. 
     
     
         8 . A FinFET device, comprising:
 at least one fin comprised of a semiconducting material;   a layer of gate insulation material that is positioned above an upper surface and two side surfaces of said fin, said layer of gate insulation material comprising a high-k insulating material;   a gate electrode comprised of graphene positioned on said layer of gate insulation material, said gate electrode being positioned above said upper surface and said two side surfaces of said fin; and   an insulating material formed on said gate electrode.   
     
     
         9 . The device of  claim 8 , wherein said layer of gate insulation material is positioned on said upper surface and on said two side surfaces of said fin. 
     
     
         10 .- 23 . (canceled) 
     
     
         24 . A FinFET device, comprising:
 at least one fin comprised of silicon;   a layer of high-k gate insulation material positioned on an upper surface and two side surfaces of said fin;   a graphene gate electrode positioned on said layer of gate insulation material around at least a portion of said fin; and   an insulating material formed on said gate electrode.