US2014311676A1PendingUtilityA1

Substrate mounting table and plasma treatment device

Assignee: TOKYO ELECTRON LTDPriority: Jan 17, 2012Filed: Jan 15, 2013Published: Oct 23, 2014
Est. expiryJan 17, 2032(~5.5 yrs left)· nominal 20-yr term from priority
H10P 72/7442H10P 72/7422H10P 72/7416H10P 72/7611H10P 72/7606H10P 72/74H10P 50/287H10P 50/242H10W 20/023H10W 20/0242H01J 37/32715
39
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Claims

Abstract

A substrate mounting table ( 94 ) is equipped with a mounting table ( 2 ), an electrostatic chuck ( 6 ), and a bevel covering ( 5 ). The electrostatic chuck ( 6 ) has a supporting surface ( 6 e ) which is in contact with the whole of the rear surface of a wafer (W). The annular bevel covering ( 5 ) has an outer diameter (DA) which is greater than that of the supporting surface ( 6 e ), and an inner diameter (DI) which is smaller than that of the wafer (W). The bevel covering ( 5 ) is disposed such that, when viewed from the direction orthogonal to the supporting surface ( 6 e ), the bevel covering ( 5 ) surrounds the periphery of the wafer (W) supported on the supporting surface ( 6 e ).

Claims

exact text as granted — not AI-modified
1 . A substrate mounting table disposed within a processing chamber and configured to support a circular substrate to be processed, the processing chamber being configured to accommodate the substrate and perform a plasma processing, the substrate mounting table comprising:
 a substrate supporting unit which has a circular supporting surface which comes in contact with an entire rear surface of the substrate, and supports the substrate by the supporting surface; and   an annular cover member having an outer diameter larger than the supporting surface and an inner diameter smaller than the substrate,   wherein the cover member is disposed to surround a periphery of the substrate supported by the supporting surface when viewed in a direction perpendicular to the supporting surface.   
     
     
         2 . The substrate mounting table of  claim 1 , wherein the supporting surface is one side surface of the substrate supporting unit formed in a cylindrical shape, and has a diameter equal to or larger than a diameter of the substrate. 
     
     
         3 . The substrate mounting table of  claim 1 , wherein the cover member is disposed so that a central axis of the cover member is coaxial with a central axis of the substrate supporting unit. 
     
     
         4 . The substrate mounting table of  claim 1 , wherein the cover member is disposed to cover a portion between a periphery of the substrate and a position spaced 0.3 mm to 10 mm apart from the periphery of the substrate. 
     
     
         5 . The substrate mounting table of  claim 1 , wherein an inner diameter of the cover member is formed to be smaller than an outer diameter of the substrate by 0.3 mm to 1.0 mm. 
     
     
         6 . The substrate mounting table of  claim 1 , wherein the cover member is disposed so that a gap is formed between a front surface of the substrate and a rear surface of the cover member which faces the front surface of the substrate. 
     
     
         7 . The substrate mounting table of  claim 1 , wherein the cover member includes:
 a ring-shaped main body having an inner diameter larger than a diameter of the supporting surface, and   an eave portion provided at one end side of an inner periphery of the main body and protruding radially inward from the main body to form the inner diameter of the cover member.   
     
     
         8 . The substrate mounting table of  claim 1 , wherein the substrate supporting unit supports a bonded substrate as the substrate, the bonded substrate being formed by bonding a plurality of substrate to each other. 
     
     
         9 . The substrate mounting table of  claim 8 , wherein the substrate supporting unit supports a bonded substrate as the substrate, the bonded substrate being formed by bonding a plurality of substrates including substrates made of quartz glass to each other. 
     
     
         10 . A plasma treatment device comprising:
 a processing chamber configured to accommodate a circular substrate to be processed and perform a plasma processing; and   a substrate mounting table disposed within the processing chamber and configured to support the substrate,   wherein the substrate mounting table includes:   a substrate supporting unit which has a circular supporting surface which comes in contact with an entire rear surface of the substrate, and supports the substrate by the supporting surface; and   an annular cover member having an outer diameter larger than the supporting surface and an inner diameter smaller than the substrate,   wherein the cover member is disposed to surround a periphery of the substrate supported by the supporting surface when viewed in a direction perpendicular to the supporting surface.

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