Vapor deposition apparatus having pretreatment device that uses plasma

Abstract

A roller-type continuous vapor deposition film-forming apparatus for a substrate that is to be conveyed at high speed, comprising a plasma pretreatment device and a film-forming apparatus provided in series, wherein a substrate conveying compartment 12 A, a pretreatment compartment 12 B and film formation compartment 12 C are formed inside a chamber 3 ; and a substrate S is wound from an unwinding roller 13 onto a plasma pretreatment roller 20 and film formation roller 25 , which are provided in series, via guide rollers 14 a - 14 d , and is taken up by a take-up roller 15 . In the pretreatment device, plasma P is supplied toward the substrate S inside a gap, wherein a plasma-forming gas to be supplied from plasma supply nozzles 22 a, 22 b is surrounded by the pretreatment roller, the plasma supply nozzles and a magnet 21 , as magnetic forming means, and the plasma is electrically set to a positive electrical potential, power is supplied between the electrodes positioned on the substrate surface side, the plasma P is generated and an active pretreatment surface is formed on the surface of the substrate S. An inorganic oxide can be formed at high speed by the film formation device by physical vapor deposition or the like on a pretreatment surface of a substrate that has been subjected to the pretreatment.

1 . A multiple roller-type continuous vapor deposition film-forming apparatus having a plasma-employing roller-type pretreatment device installed in series, the roller-type continuous vapor deposition film-forming apparatus comprising
 a pressure reduction chamber,   conveying means that conveys the substrate in the pressure reduction chamber,   means that isolates the pressure reduction chamber interior into at least a pretreatment compartment and a film formation compartment,   a pretreatment roller provided in the pressure reduction chamber for at least plasma treatment of the taken-up substrate, and a plurality of substrate treatment rollers including a film-forming roller for film formation of a vapor deposition film on the substrate pretreated surface,   plasma pretreatment means comprising plasma-supply means that supplies a plasma source gas composed of oxygen, nitrogen, carbon dioxide gas, ethylene or a mixture of one or more of these with argon and magnetic field-forming means, and   vapor deposition film-forming means for forming a vapor deposition film on the plasma-pretreated substrate surface,   having a construction in which the pretreatment roller and the plasma-supply means and the magnetic field-forming means are disposed with the pretreatment roller facing the pretreatment roller, and the plasma source gas that has been supplied is introduced as plasma near the substrate surface and concentrated, with a gap to entrap the plasma, while it is held with a desired voltage being applied between the plasma pretreatment roller and the plasma-supply means.   
     
     
         2 . A multiple roller-type continuous vapor deposition film-forming apparatus according to  claim 1 , wherein the plasma pretreatment is treatment of the substrate under conditions with a plasma density of 100 to 8000 W·sec/m 2 . 
     
     
         3 . A film-forming apparatus according to  claim 1 , wherein the vapor deposition film-forming means is physical vapor deposition means. 
     
     
         4 . A film-forming apparatus according to  claim 2 , wherein the vapor deposition film-forming means is physical vapor deposition means.