Chemical mechanical polishing conditioner

Abstract

The present invention relates to a chemical mechanical polishing conditioner which comprises: a substrate; a bonding layer, disposed on the substrate; and an abrasive layer, having a thin metal sheet and a first layer of abrasive particles, wherein the first layer of abrasive particles is disposed on the thin metal sheet, and the abrasive layer is coupled to the substrate with the bonding layer; wherein the first layer of abrasive particles comprises a plurality of abrasive particles, of which protruding tips has a planar leveling surface, so that the plurality of abrasive particles do not have one or more protruding tips of the plurality of abrasive particles having particular significant difference in protrusion distance, and the plurality of abrasive particles have a patterning arrangement. Therefore, the present invention can reduce damage ratio of polished workpieces by a planar leveling surface of the chemical mechanical polishing conditioner, so that the chemical mechanical polishing conditioner has more excellent polishing efficiency and working life.

1 . A chemical mechanical polishing conditioner, which comprises:
 a substrate;   a bonding layer, disposed on the substrate; and   an abrasive layer, having a thin metal sheet and a first layer of abrasive particles, wherein the first layer of abrasive particles is disposed on the thin metal sheet, and the abrasive layer is coupled to the substrate with the bonding layer;   wherein the first layer of abrasive particles comprises a plurality of abrasive particles, of which protruding tips have a planar leveling surface, so that the plurality of abrasive particles do not have one or more protruding tips of the plurality of abrasive particles having particular significant difference in protrusion distance, and the plurality of abrasive particles have a patterning arrangement.   
     
     
         2 . The chemical mechanical polishing conditioner as claimed in  claim 1 , further comprising a second layer of abrasive particles, wherein the second layer of abrasive particles is disposed under the thin metal sheet and is sandwiched between the thin metal sheet and the bonding layer. 
     
     
         3 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the plurality of abrasive particles of the first layer of abrasive particles have a monolayer arrangement. 
     
     
         4 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the first layer of abrasive particles and the second layer of abrasive particles have the same configuration and distribution of abrasive particles. 
     
     
         5 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the plurality of abrasive particles are coupled to the thin metal sheet with the bonding layer of abrasive particles. 
     
     
         6 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the difference in protrusion distance between the highest protruding tip and the 2 nd  highest protruding tip of the first layer of abrasive particles is less than or equal to about 20 microns. 
     
     
         7 . The chemical mechanical polishing conditioner as claimed in  claim 6 , wherein the difference in protrusion distance between the highest protruding tip and the 2 nd  highest protruding tip of the first layer of abrasive particles is less than or equal to about 10 microns. 
     
     
         8 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the difference in protrusion distance between the highest protruding tip and the 10 th  highest protruding tip of the first layer of abrasive particles is less than or equal to about 20 microns. 
     
     
         9 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the difference in protrusion distance between the highest protruding tip and the 100 th  highest protruding tip of the first layer of abrasive particles is less than or equal to about 40 microns. 
     
     
         10 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the difference in protrusion distance between the highest 1% of the protruding tips of the first layer of abrasive particles is less than or equal to about 80 microns. 
     
     
         11 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the planar leveling surface is made by a hypothetical plane as a level, so that the planar leveling surface is formed the protruding tips of the plurality of abrasive particles relative to the hypothetical plane. 
     
     
         12 . The chemical mechanical polishing conditioner as claimed in  claim 11 , wherein the planar leveling surface is configured of the protruding tips of the discontinuous abrasive particles extrapolated by FRT measurement. 
     
     
         13 . The chemical mechanical polishing conditioner as claimed in  claim 12 , wherein the number of the protruding tips of the plurality of abrasive particles are from 1000 to 30,000 or more. 
     
     
         14 . The chemical mechanical polishing conditioner as claimed in  claim 13 , wherein the number of the protruding tips of the plurality of abrasive particles is 1000. 
     
     
         15 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein, after the chemical mechanical polishing conditioner is used, the chemical mechanical polishing conditioner has 300 or more abrasive particles producing wear and tear during the scaling value of 50 multiplying power. 
     
     
         16 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the patterning arrangement is an array pattern, a annular ring pattern, a concentric annular ring pattern, or a spiral ring pattern. 
     
     
         17 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the plurality of abrasive particles are oriented in a specific attitude, and the plurality of abrasive particles is formed a tip-grinding surface, a plane-grinding surface, a ridge-grinding surface or a combination thereof. 
     
     
         18 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the plurality of abrasive particles are synthetic diamond, natural diamond, Poly-crystalline diamond, CBN (cubic Boron Nitride), or PCBN (Poly-crystalline cubic Boron Nitride). 
     
     
         19 . The chemical mechanical polishing conditioner as claimed in  claim 1 , the particle size of the plurality of abrasive particles is from 100 microns to 600 microns. 
     
     
         20 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the bonding layer or the bonding layer of abrasive particles is a solder layer, a plating layer, a sinter layer, or a resin layer. 
     
     
         21 . The chemical mechanical polishing conditioner as claimed in  claim 20 , wherein the bonding layer or the bonding layer of abrasive particles is a solder layer. 
     
     
         22 . The chemical mechanical polishing conditioner as claimed in  claim 21 , wherein the solder layer is at least one selected from the group consisting of copper (Cu), ferrous (Fe), stannum (Sn), cobalt (Co), nickel (Ni), chromium (Cr), manganese (Mn), silicon (Si), aluminum (Al), titanium (Ti), boron (B), phosphorus (P), or combinations thereof. 
     
     
         23 . The chemical mechanical polishing conditioner as claimed in  claim 1 , wherein the substrate is a stainless steel layer. 
     
     
         24 . The chemical mechanical polishing conditioner as claimed in  claim 1 , further comprising a protective layer disposed on the surface of the abrasive layer. 
     
     
         25 . The chemical mechanical polishing conditioner as claimed in  claim 24 , wherein the protective layer is a Ni-metal layer, a Pd-metal layer, a DLC layer, or a layer of diamond thin film.