Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the same

Abstract

A semiconductor device includes a first interconnect formed over the semiconductor substrate. An interlayer dielectric film is formed over the first interconnect, and a hole is formed in the interlayer dielectric film such that the hole reaches the first interconnect. A trench is formed in the interlayer dielectric film, and a conductive film is embedded in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench. In a planar view, the first interconnect extends in a first direction, the second interconnect extends in a second direction which is perpendicular to the first direction, and a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.

1 . A semiconductor device, comprising:
 a first interconnect formed over the semiconductor substrate;   an interlayer dielectric film formed over the first interconnect;   a hole formed in the interlayer dielectric film such that the hole reaches the first interconnect;   a trench formed in the interlayer dielectric film; and   a conductive film embedded in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench,   wherein, in a planar view, the first interconnect extends in a first direction,   wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and   wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.   
     
     
         2 . A semiconductor device according to the  claim 1 ,
 wherein the maximum width of the via in the second direction is larger than a width of the via in the first interconnect in the second direction.   
     
     
         3 . A semiconductor device according to the  claim 1 ,
 wherein the maximum width of the via in the first direction is the same width as the second interconnect in the first direction.   
     
     
         4 . A semiconductor device according to the  claim 1 ,
 wherein the maximum width of the via in the second direction is twice or more than the maximum width of the via in the first direction.   
     
     
         5 . A semiconductor device according to the  claim 1 ,
 wherein the conductive film includes a copper film, and   wherein a barrier metal film is formed between the conductive film and the interlayer dielectric film and between the conductive film and the first interconnect.   
     
     
         6 . A semiconductor device, comprising:
 a first interconnect formed over the semiconductor substrate;   an interlayer dielectric film formed over the first interconnect;   a via formed in the interlayer dielectric film such that the via is connected with the first interconnect; and   a second interconnect formed in the interlayer dielectric film such that the second interconnect is connected with the via,   wherein, in a planar view, the first interconnect extends in a first direction,   wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and   wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.   
     
     
         7 . A semiconductor device according to the  claim 6 ,
 wherein the maximum width of the via in the second direction is larger than a width of the via in the first interconnect in the second direction.   
     
     
         8 . A semiconductor device according to the  claim 6 ,
 wherein the maximum width of the via in the first direction is the same width as the second interconnect in the first direction.   
     
     
         9 . A semiconductor device according to the  claim 6 ,
 wherein the maximum width of the via in the second direction is twice or more than the maximum width of the via in the first direction.   
     
     
         10 . A semiconductor device according to the  claim 6 ,
 wherein the first and second interconnect include a copper film, respectively.