Metal catalyst, method for manufacturing the metal catalyst and electrochemical reduction method

Abstract

This invention relates to a metal catalyst, a manufacturing method of the metal catalyst, and an electrochemical reduction method. The metal catalyst is manufactured by a method comprising providing a conductor to one side of an insulator, providing a fluid including a metal ion and an electron mediator to the other side of the insulator and providing a voltage to the conductor. The electrochemical reduction method comprises providing a conductor to one side of an insulator, providing a fluid including reduction material and an electron mediator to the other side of the insulator and providing a voltage to the conductor.

What is claimed is: 
     
         1 . A metal catalyst manufactured by a method comprising:
 providing a conductor to one side of an insulator;   providing a fluid including a metal ion and an electron mediator to the other side of the insulator; and   providing a voltage to the conductor.   
     
     
         2 . The metal catalyst of  claim 1 ,
 wherein the metal catalyst comprises a crystal structure with a miller index of (hkl), and at least one of the h, k and l is more than 2.   
     
     
         3 . The metal catalyst of  claim 1 ,
 wherein the metal catalyst has a polygonal shape.   
     
     
         4 . The metal catalyst of  claim 1 ,
 wherein the metal catalyst comprises two or more kinds of metals.   
     
     
         5 . The metal catalyst of  claim 1 ,
 wherein the metal ion comprises one or more chosen from palladium, gold, platinum, copper and cobalt.   
     
     
         6 . The metal catalyst of  claim 1 ,
 wherein the electron mediator comprises one or more chosen from a hydrogen ion, a hydrogen atom and a hydrogen molecule.   
     
     
         7 . The metal catalyst of  claim 1 ,
 wherein the fluid comprises a solution or a gas,   the solution comprises an aqueous solution or an organic solution, and   the gas comprises hydrogen gas.   
     
     
         8 . The metal catalyst of  claim 1 ,
 wherein the conductor comprises a semiconductor or a metal doped by an n-type dopant or a p-type dopant.   
     
     
         9 . The metal catalyst of  claim 1 ,
 wherein the insulator is a dielectric layer, and   the insulator comprises a semiconductor oxide, a metal oxide, a semiconductor nitride, a metal nitride or a polymer.   
     
     
         10 . The metal catalyst of  claim 1 ,
 wherein the insulator has a thickness of about 0.5 nm to about 100 μm.   
     
     
         11 . A method for manufacturing a metal catalyst, comprising:
 providing a conductor to one side of an insulator;   providing a fluid including a metal ion and an electron mediator to the other side of the insulator; and   providing a voltage to the conductor.   
     
     
         12 . The method for manufacturing a metal catalyst of  claim 12 ,
 wherein the insulator comprises a functional group reacting and combining with the metal ion at a surface of the insulator contacting with the solution.   
     
     
         13 . An electrochemical reduction method, comprising:
 providing a conductor to one side of an insulator;   providing a fluid including reduction material and an electron mediator to the other side of the insulator; and   providing a voltage to the conductor.   
     
     
         14 . The electrochemical reduction method of  claim 13 ,
 wherein the electron mediator moves into the insulator by the voltage and receives electrons from the conductor and provides the electrons to the reduction material.   
     
     
         15 . The electrochemical reduction method of  claim 13 ,
 wherein the electron mediator comprises one or more chosen from a hydrogen ion, a hydrogen atom and a hydrogen molecule.   
     
     
         16 . The electrochemical reduction method of  claim 13 ,
 wherein the fluid comprises a solution or a gas,   the solution comprises an aqueous solution or an organic solution, and   the gas comprises hydrogen gas.   
     
     
         17 . The electrochemical reduction method of  claim 16 ,
 wherein an electric current flows in the insulator by the voltage, and   the size of the electric current is adjusted by a pH of the solution.   
     
     
         18 . The electrochemical reduction method of  claim 13 ,
 wherein the conductor comprises a semiconductor or a metal doped by an n-type dopant or a p-type dopant.   
     
     
         19 . The electrochemical reduction method of  claim 13 ,
 wherein the insulator is a dielectric layer, and   the insulator comprises a semiconductor oxide, a metal oxide, a semiconductor nitride, a metal nitride or a polymer.   
     
     
         20 . The electrochemical reduction method of  claim 13 ,
 wherein the insulator has a thickness of about 0.5 nm to about 100 μm.