Methods and apparatus for dielectric deposition

Abstract

Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.

1 . An apparatus comprising:
 a flowable dielectric deposition chamber configured to deposit flowable dielectric film; and   a controller, said controller comprising instructions for introducing into the flowable dielectric deposition chamber a process gas comprising a silicon-containing precursor, wherein the silicon-containing precursor is characterized by having a partial pressure (Pp):vapor pressure (Pvp) ratio of 0.01-1.   
     
     
         2 . The apparatus of  claim 1 , further comprising a high density plasma chemical vapor deposition (HDP-CVD) deposition chamber configured to deposit HDP dielectric film. 
     
     
         3 . The apparatus of  claim 2 , wherein the controller further comprises instructions for transferring a substrate from the flowable dielectric deposition chamber to the HDP-CVD chamber after introducing the process gas to the flowable dielectric deposition chamber. 
     
     
         4 . The apparatus of  claim 3 , wherein the controller further comprises instructions to deposit HDP dielectric film after transferring the substrate. 
     
     
         5 . The apparatus of  claim 1 , wherein the flowable dielectric deposition chamber comprises a plasma generator. 
     
     
         6 . The apparatus of  claim 6 , wherein the controller further comprises instructions to, after introducing the process gas to the flowable dielectric deposition chamber, generate a high-density plasma in the plasma generator and deposit HDP dielectric film. 
     
     
         7 . The apparatus of  claim 1 , wherein the process gas further comprises an oxidant, wherein the wherein the oxidant is characterized by the following partial pressure (Pp):vapor pressure (Pvp) ratio: 0.25-2. 
     
     
         8 . The apparatus of  claim 1 , wherein the process gas further comprises a solvent, wherein the wherein the solvent is characterized by having a partial pressure (Pp):vapor pressure (Pvp) ratio of 0.1-1. 
     
     
         9 . A method, comprising:
 introducing a process gas comprising a silicon-containing precursor and an oxidant to a deposition, wherein the process gas is characterized as having an oxidant:precursor partial pressure ratio of about 5 to 15 to thereby deposit a flowable dielectric film on a substrate in the process chamber.   
     
     
         10 . The method of  claim 9 , wherein the process gas further comprises a solvent. 
     
     
         11 . The method of  claim 9 , further comprising a depositing a high density plasma chemical vapor deposition (HDP-CVD) dielectric film via a high density plasma chemical vapor deposition reaction on the flowable dielectric film. 
     
     
         12 . A method of depositing a dielectric film on a substrate, the method comprising:
 introducing a process gas comprising a silicon-containing precursor to thereby deposit a flowable dielectric film on the substrate, wherein the silicon-containing precursor is characterized by having a partial pressure (Pp):vapor pressure (Pvp) ratio of 0.01-1.   
     
     
         13 . The method of  claim 12 , wherein the process gas further comprises an oxidant, wherein the wherein the oxidant is characterized by the following partial pressure (Pp):vapor pressure (Pvp) ratio 0.25-2. 
     
     
         14 . The method of  claim 12 , wherein the process gas further comprises a solvent, wherein the wherein the solvent is characterized by the following partial pressure (Pp):vapor pressure (Pvp) ratio 0.1-1. 
     
     
         15 . The method of  claim 12 , further comprising depositing a high density plasma (HDP) dielectric film on the flowable dielectric film. 
     
     
         16 . The method of  claim 12 , wherein the flowable dielectric film is a silicon oxide film, a silicon nitride film or a silicon oxynitride film.