US2014302441A1PendingUtilityA1

Method for manufacturing a magnetoresistive sensor using simultaneously formed hard bias and electrical lapping guide

Assignee: HGST Netherlands BVPriority: Jun 29, 2011Filed: Jun 20, 2014Published: Oct 9, 2014
Est. expiryJun 29, 2031(~4.9 yrs left)· nominal 20-yr term from priority
G11B 5/3169G11B 5/3909G11B 2005/3996B82Y 10/00G03F 7/20
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Claims

Abstract

A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing a magnetoresistive sensor, comprising:
 forming a magnetoresistive sensor having a first and second hard bias layers comprising a magnetic material;   forming an electrical lapping guide comprising the same magnetic material as the hard bias layers.   
     
     
         2 . The method as in  claim 1  wherein the hard bias layers and the electrical lapping guide are deposited in a common deposition process. 
     
     
         3 . The method as in  claim 1  wherein the sensor has a back edge and the electrical lapping guide has a back edge and wherein the back edge of the sensor and lapping guide are patterned in a common lithographic process. 
     
     
         4 . The method as in  claim 1  wherein the sensor has a back edge, the hard bias layers have a back edge and the electrical lapping guide has a back edge, and wherein the back edge of the sensor and lapping guide are patterned in a common lithographic process. 
     
     
         5 . The method as in  claim 4  wherein the back edges of the sensor and hard bias layers are at a common location. 
     
     
         6 . The method as in  claim 1  wherein the sensor has a back edge and a portion of the sensor extends beyond the back edge, and wherein the electrical lapping guide has a back edge and wherein the back edges of the electrical lapping guide and the sensor are formed in a common patterning process. 
     
     
         7 . The method as in  claim 1  wherein the common patterning process comprises forming a mask over the sensor and over the electrical lapping guide and performing an ion milling to remove portions of the sensor material and electrical lapping guide that are not protected by the mask, the ion milling being terminated after the ion milling has extended all of the way through the electrical lapping guide and before the electrical lapping guide has extended all of the way through the sensor.

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