Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation

Abstract

Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.

What is claimed: 
     
         1 . A deposition chamber comprising:
 a substrate support configured to support at least one substrate;   a first processing region configured to expose the at least one substrate to one or more precursor gases;   a second processing region configured to expose the at least one substrate to an excited inert gas neutral species; and   a third processing region configured to perform at least one metrology technique on a film formed on the at least one substrate,   wherein the first, second, and third processing regions are fluidically isolated from one another.   
     
     
         2 . The deposition chamber of  claim 1 , wherein the one or more precursor gases comprises one or more of Si-containing gases, Ge-containing gases, or combinations thereof. 
     
     
         3 . The deposition chamber of  claim 2 , wherein the Si-containing gases comprise one of SiH 4 , or Si 2 H 6  or combinations thereof. 
     
     
         4 . The deposition chamber of  claim 2 , wherein the Ge-containing gases comprise one of GeH 4 , or Ge 2 H 6  or combinations thereof. 
     
     
         5 . The deposition chamber of  claim 1 , wherein the at least one metrology technique comprises one or more of ellipsometry, Fourier Transform Infra-red (FTIR) spectroscopy, optical methods for measuring surface roughness, pyrometry, or combination thereof. 
     
     
         6 . The deposition chamber of  claim 1 , further comprising a fourth processing region configured to expose the at least one substrate to hydrogen plasma. 
     
     
         7 . The deposition chamber of  claim 1 , wherein the substrate support is further configured to rotate about a central axis thereof. 
     
     
         8 . The deposition chamber of  claim 1 , wherein the excited inert gas neutral species is generated using plasma energy or laser irradiation. 
     
     
         9 . The deposition chamber of  claim 1 , wherein the inert gas comprises one or more of He, Ne, Ar, Kr, Xe, or combinations thereof. 
     
     
         10 . The deposition chamber of  claim 1 , wherein the deposition chamber is configured such that the formation of the film occurs at between about 25 C and about 600 C. 
     
     
         11 . A deposition chamber comprising:
 a substrate support configured to support at least one substrate;   a first processing region configured to expose the at least one substrate to one or more precursor gases, wherein the one or more precursor gases comprises one or more of Si-containing gases, Ge-containing gases, or combinations thereof;   a second processing region configured to expose the at least one substrate to an excited inert gas neutral species; and   a third processing region configured to perform at least one metrology technique on a film formed on the at least one substrate, wherein the at least one metrology technique comprises one or more of ellipsometry, Fourier Transform Infra-red (FTIR) spectroscopy, optical methods for measuring surface roughness, pyrometry, or combination thereof,   wherein the first, second, and third processing regions are fluidically isolated from one another.   
     
     
         12 . The deposition chamber of  claim 11 , further comprising a fourth processing region configured to expose the at least one substrate to hydrogen plasma. 
     
     
         13 . The deposition chamber of  claim 11 , wherein the Si-containing gases comprise one of SiH 4 , or Si 2 H 6  or combinations thereof. 
     
     
         14 . The deposition chamber of  claim 11 , wherein the Ge-containing gases comprise one of GeH 4 , or Ge 2 H 6  or combinations thereof. 
     
     
         15 . The deposition chamber of  claim 11 , wherein the excited inert gas neutral species is generated using plasma energy or laser irradiation. 
     
     
         16 . A deposition chamber comprising:
 a substrate support configured to support at least one substrate;   a first processing region configured to expose the at least one substrate to one or more precursor gases;   a second processing region configured to expose the at least one substrate to an excited inert gas neutral species;   a third processing region configured to expose the at least one substrate to hydrogen plasma; and   a fourth processing region configured to perform at least one metrology technique on a film formed on the at least one substrate,   wherein the first, second, third, and fourth processing regions are fluidically isolated from one another.   
     
     
         17 . The deposition chamber of  claim 16 , wherein the at least one metrology technique comprises one or more of ellipsometry, Fourier Transform Infra-red (FTIR) spectroscopy, optical methods for measuring surface roughness, pyrometry, or combination thereof. 
     
     
         18 . The deposition chamber of  claim 16 , wherein the Si-containing gases comprise one of SiH 4 , or Si 2 H 6  or combinations thereof, and the Ge-containing gases comprise one of GeH 4 , or Ge 2 H 6  or combinations thereof. 
     
     
         19 . The deposition chamber of  claim 16 , wherein the inert gas comprises one or more of He, Ne, Ar, Kr, Xe, or combinations thereof. 
     
     
         20 . The deposition chamber of  claim 16 , wherein the excited inert gas neutral species is generated using plasma energy or laser irradiation.