US2014298548A1PendingUtilityA1

Scanning probe microscope

Assignee: HITACHI LTDPriority: Dec 19, 2007Filed: Jun 13, 2014Published: Oct 2, 2014
Est. expiryDec 19, 2027(~1.4 yrs left)· nominal 20-yr term from priority
G01Q 60/28G01Q 10/00B82Y 35/00G01Q 60/34
54
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Claims

Abstract

A scanning probe microscope is provided for scanning a sample surface with a probe formed on a cantilever and detecting an interaction acting between the probe and the sample surface to measure a physical property including a surface shape of the sample. The microscope includes an arrangement for detecting torsion of the cantilever and for correcting a profile error caused by deflection of the probe and torsion of the cantilever based on the amount of torsion which is detected.

Claims

exact text as granted — not AI-modified
What we claim is: 
     
         1 . A scanning probe microscope for scanning a sample surface with a probe formed on a cantilever and detecting an interaction acting between the probe and the sample surface to measure a physical property including a surface shape of the sample, comprising means for detecting torsion of the cantilever and for correcting a profile error caused by deflection of the probe and torsion of the cantilever based on the amount of torsion which is detected. 
     
     
         2 . The scanning probe microscope according to  claim 1 , wherein said means corrects the profile error is corrected by obtaining a relationship between an amount of torsion of the cantilever and the profile error from a measured profile of the sample whose side wall shape is known. 
     
     
         3 . The scanning probe microscope according to  claim 1 , further comprising a side wall shape of the sample is known. 
     
     
         4 . The scanning probe microscope according to  claim 1 , wherein said means corrects the profile error by obtaining a relationship between an amount of torsion of the cantilever and the profile error from a relationship between an amount of displacement in a horizontal direction of a tip of the probe and the amount of torsion of the cantilever when displacement in a horizontal direction is caused to occur in the tip of the probe. 
     
     
         5 . The scanning probe microscope according to  claim 1 , further comprising means for correcting a profile error caused by a probe tip. 
     
     
         6 . The scanning probe microscope according to  claim 1 , further comprising means for detecting a side wall portion of a measured pattern, wherein measuring point pitch in a horizontal direction is reduced when the probe reaches the side wall. 
     
     
         7 . The scanning probe microscope according to  claim 6 , further comprising means for detecting the measured pattern side wall portion by analyzing a magnitude of a height change rate of a measured profile. 
     
     
         8 . The scanning probe microscope according to  claim 6 , further comprising means for detecting the measured pattern side wall portion by detecting adhesion of the probe to the measured pattern side wall. 
     
     
         9 . The scanning probe microscope according to  claim 1 , further comprising means for detecting a side wall portion of a measured pattern based on a control state of the probe being changed when the probe reaches the side wall portion of a measured pattern. 
     
     
         10 . The scanning probe microscope according to  claim 9 , further comprising means for deleting the measured pattern side wall portion by analyzing a magnitude of a height change rate of a measured profile. 
     
     
         11 . The scanning probe microscope according to  claim 9 , further comprising means for detecting the measured pattern side wall portion by detecting adhesion of the probe to the measured pattern side wall. 
     
     
         12 . The scanning probe microscope according to  claim 9 , further comprising means for changing the control state of the probe by increasing a contact force between the probe and the sample. 
     
     
         13 . The scanning probe microscope according to  claim 12 , wherein a measurement is performed at a given height pitch during movement of the probe on the side wall by the increase in the contact force.

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