US2014293256A1PendingUtilityA1
Microlithography projection objective
Est. expiryJun 2, 2025(expired)· nominal 20-yr term from priority
Inventors:Heiko FeldmannDaniel KraehmerJean-Claude PerrinJulian KallerAurelian DodocVladimir KamenovOlaf ConradiToralf GrunerThomas OkonAlexander Epple
G03F 7/702G02B 17/08G03F 7/70283G03F 7/70941G03F 7/70225H10P 76/00G03F 7/20G02B 13/00
60
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Claims
Abstract
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
Claims
exact text as granted — not AI-modified1 - 53 . (canceled)
54 . A microlithography projection objective for imaging into an image plane a pattern arranged in an object plane, comprising:
a plurality of optical components that respectively have at least one optically active surface, wherein:
a first optical component of the plurality of optical components has a first optically operative surface that, during the operation of the projection objective, has a first surface region not used by an imaging beam path for imaging the pattern into the image plane;
the first optically operative surface is assigned a first shield that masks out the first surface region, not used by the imaging beam path, of the first optically operative surface in order to suppress false light; and
the first shield is a shielding coating on the first surface region not used by the imaging beam path.
55 . The projection objective of claim 54 , wherein the first shield is reflective for a wavelength of the light used for imaging.
56 . The projection objective of claim 54 , wherein the first shield is absorbing for a wavelength of the light used for imaging, or the first shield is provided with an absorbing coating.
57 . The projection objective of claim 56 , wherein the absorbance of the first shield is at least approximately 95%.
58 . The projection objective of claim 56 , wherein the first shield has photocatalytic properties.
59 . The projection objective of claim 54 , wherein the first optically operative surface that is assigned the at least one first shield is a near-field surface.
60 . The projection objective of claim 54 , wherein the first shield is arranged between the object plane and the first optical component of the projection objective, and/or the first shield is arranged between the last optical component of the projection objective and the image plane.
61 . The projection objective of claim 54 , wherein the first optical component is a mirror.
62 . The projection objective of claim 54 , wherein the first optical component is a lens.
63 . The projection objective of claim 54 , wherein the plurality of optical components comprises a second optical component that has second optically operative surface that, during operation of the projection objective, has a second surface region not used by the imaging beam path for imaging the pattern into the image plane, and the second optically operative surface is assigned a second shield that masks out the second surface region, not used by the imaging beam path, of the second optically operative surface.
64 . The projection objective of claim 54 , wherein the plurality of optical components comprises at least two mirrors.
65 . The projection objective of claim 64 , wherein the plurality of optical components comprises at least four mirrors.
66 . The projection objective of claim 54 , wherein the projection objective is an immersion projection objective.
67 . The projection objective of claim 54 , further comprising at least a further shield configured to shield over-aperture light from the object plane.
68 . The projection objective of claim 55 , wherein the first shield is absorbing for a wavelength of the light used for imaging, or the first shield is provided with an absorbing coating.
69 . The projection objective of claim 57 , wherein the first shield has photocatalytic properties.
70 . The projection objective of claim 55 , wherein the first optically operative surface that is assigned the at least one first shield is a near-field surface.
71 . The projection objective of claim 55 , wherein the first shield is arranged between the object plane and the first optical component of the projection objective, and/or the first shield is between the last optical component of the projection objective and the image plane.
72 . The projection objective of claim 55 , wherein the first optical component is a mirror.
73 . A microlithography projection exposure machine, comprising a projection objective as claimed in claim 54 .Join the waitlist — get patent alerts
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